Continuous Wave Terahertz Photomixer from Low Temperature Grown GaAs with High Carrier Mobility

被引：0
|
作者：
Tanoto, H. [1 ]
Wu, Q. Y. [1 ]
Teng, J. H. [1 ]
Sun, M. [2 ]
Chen, Z. N. [2 ]
Htoo, T. [3 ]
Chua, S. J. [1 ,3 ]
Lampin, J. F. [4 ]
Gokarna, A. [4 ]
Dogheche, E. [4 ]
机构：
[1] ASTAR, Inst Mat Res & Engn, Singapore, Singapore
[2] ASTAR, Inst Infocomm Res, Singapore, Singapore
[3] Natl Univ Singapore, Dept Elect & Comp Engn, Singapore, Singapore
[4] CNRS, Inst Elect Microelect & Nanotechnol, Paris, France
来源：
35TH INTERNATIONAL CONFERENCE ON INFRARED, MILLIMETER, AND TERAHERTZ WAVES (IRMMW-THZ 2010) | 2010年
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Low temperature GaAs grown by an MBE system exhibiting Hall carrier mobility of 5000 cm(2)/v.s. is fabricated into continuous-wave (CW) Terahertz (THz) photomixers utilizing a dual-dipole antenna with an interdigitated feed structure. The characteristics of the CW THz photomixer are presented.
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页数：2
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