Carrier dynamics in low-temperature grown GaAs studied by terahertz emission spectroscopy

被引：0
|
作者：
Nemec, H
Pashkin, A
Kuzel, P
Khazan, M
Schnüll, S
Wilke, I
机构：
[1] Acad Sci Czech Republ, Inst Phys, Prague 18221 8, Czech Republic
[2] Acad Sci Czech Republ, Ctr Mol Syst & Biomol, Prague 18221 8, Czech Republic
[3] Univ Hamburg, Inst Angew Phys, D-20355 Hamburg, Germany
来源：
JOURNAL OF APPLIED PHYSICS | 2001年 / 90卷 / 03期
关键词：
D O I：
暂无
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Ultrafast dynamics of free carriers in low-temperature grown GaAs was studied using time-domain terahertz emission spectroscopy. The subpicosecond free-carrier lifetime was determined for a set of annealed samples with different growth temperatures (175-250 degreesC), the carrier mobility was also estimated. The influence of the growth temperature on the ultrafast carrier trapping is discussed. (C) 2001 American Institute of Physics.
引用
收藏
页码：1303 / 1306
页数：4
相关论文
共 50 条
  • [1] Carrier dynamics of terahertz emission from low-temperature-grown GaAs
    Liu, DF
    Qin, JY
    [J]. APPLIED OPTICS, 2003, 42 (18) : 3678 - 3683
  • [2] Subpicosecond carrier dynamics in low-temperature grown GaAs as measured by time-resolved terahertz spectroscopy
    Beard, MC
    Turner, GM
    Schmuttenmaer, CA
    [J]. JOURNAL OF APPLIED PHYSICS, 2001, 90 (12) : 5915 - 5923
  • [3] Ultrafast carrier dynamics in Au/GaAs interfaces studied by terahertz emission spectroscopy
    Shi, YL
    Yang, YP
    Xu, XL
    Ma, SH
    Yan, W
    Wang, L
    [J]. APPLIED PHYSICS LETTERS, 2006, 88 (16)
  • [4] Study on ultrafast dynamics of low-temperature grown GaAs by optical pump and terahertz probe spectroscopy
    Fan Zheng-Fu
    Tan Zhi-Yong
    Wan Wen-Jian
    Xing Xiao
    Lin Xian
    Jin Zuan-Ming
    Cao Jun-Cheng
    Ma Guo-Hong
    [J]. ACTA PHYSICA SINICA, 2017, 66 (08)
  • [5] Arsenic pressure dependence of carrier lifetime and annealing dynamics for low-temperature grown GaAs studied by pump-probe spectroscopy
    Yano, R
    Hirayama, Y
    Miyashita, S
    Uesugi, N
    Uehara, S
    [J]. JOURNAL OF APPLIED PHYSICS, 2003, 94 (06) : 3966 - 3971
  • [6] Arsenic pressure dependence of carrier lifetime and annealing dynamics for low-temperature grown GaAs studied by pump-probe spectroscopy
    Yano, R.
    Hirayama, Y.
    Miyashita, S.
    Uesugi, N.
    Uehara, S.
    [J]. Journal of Applied Physics, 2003, 94 (06): : 3966 - 3971
  • [7] Pump and probe terahertz generation study of ultrafast carrier dynamics in low-temperature grown-GaAs
    Tonouchi, M
    Kawasaki, N
    Yoshimura, T
    Wald, H
    Seidel, P
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2002, 41 (6B): : L706 - L709
  • [8] Subpicosecond carrier dynamics in low-temperature grown GaAs on Si substrates
    Kadow, C
    Fleischer, SB
    Ibbetson, JP
    Bowers, JE
    Gossard, AC
    [J]. APPLIED PHYSICS LETTERS, 1999, 75 (17) : 2575 - 2577
  • [9] Terahertz generation study of ultrafast carrier dynamics in polycrystalline low-temperature GaAs
    Kawasaki, N
    Yoshimura, T
    Tonouchi, M
    Tani, M
    Sakai, K
    Katahama, H
    [J]. POLYCRYSTALLINE SEMICONDUCTORS VII, PROCEEDINGS, 2003, 93 : 367 - 372
  • [10] Chirped-pulse control of carrier dynamics in low-temperature grown GaAs
    Lee, Chao-Kuei
    Lin, Sung-Hui
    Yang, C. S.
    Pan, Ci-Ling
    [J]. 2011 IEEE PHOTONICS CONFERENCE (PHO), 2011, : 320 - +
12345