Simulation Model of Oxide-Aperture Strain Quantum Well VCSEL

被引：1
|
作者：
Shih, Hsiang-Yun [1 ]
Cho, Yu-Yun [1 ]
Hsu, Shun-Chieh [1 ]
Huang, Yu-Ming [1 ]
Wang, Shou-Wei [1 ]
Huang, Huang-Hsiung [1 ]
Wu, Chao-Hsin [2 ]
Yeh, Yen-Wei [3 ]
Lu, Yun-Ting [3 ]
Kuo, Hao-Chung [3 ]
Lin, Chien-Chung [1 ]
机构：
[1] Natl Chiao Tung Univ, Inst Photon Syst, 301,Gaofa 3rd Rd, Tainan 71150, Taiwan
[2] Natl Taiwan Univ, Grad Inst Photon & Optoelect, Taipei 10617, Taiwan
[3] Natl Chiao Tung Univ, Inst Electroopt Engn, Hsinchu, Taiwan
来源：
2019 IEEE PHOTONICS CONFERENCE (IPC) | 2019年
关键词：
Quantum-well; -wire and -dot devices; Bragg reflector; Laser; fiber;
D O I：
10.1109/ipcon.2019.8908386
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
An oxide aperture strained quantum well VCSEL model was built based on measured results. The indium composition of MQW was changed to maximize the frequency response. The simulation result shows that the bandwidth can be improved and reach 30.88GHz.
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收藏
页数：2
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