Simulation Model of Oxide-Aperture Strain Quantum Well VCSEL

被引：1
|
作者：
Shih, Hsiang-Yun [1 ]
Cho, Yu-Yun [1 ]
Hsu, Shun-Chieh [1 ]
Huang, Yu-Ming [1 ]
Wang, Shou-Wei [1 ]
Huang, Huang-Hsiung [1 ]
Wu, Chao-Hsin [2 ]
Yeh, Yen-Wei [3 ]
Lu, Yun-Ting [3 ]
Kuo, Hao-Chung [3 ]
Lin, Chien-Chung [1 ]
机构：
[1] Natl Chiao Tung Univ, Inst Photon Syst, 301,Gaofa 3rd Rd, Tainan 71150, Taiwan
[2] Natl Taiwan Univ, Grad Inst Photon & Optoelect, Taipei 10617, Taiwan
[3] Natl Chiao Tung Univ, Inst Electroopt Engn, Hsinchu, Taiwan
来源：
2019 IEEE PHOTONICS CONFERENCE (IPC) | 2019年
关键词：
Quantum-well; -wire and -dot devices; Bragg reflector; Laser; fiber;
D O I：
10.1109/ipcon.2019.8908386
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
An oxide aperture strained quantum well VCSEL model was built based on measured results. The indium composition of MQW was changed to maximize the frequency response. The simulation result shows that the bandwidth can be improved and reach 30.88GHz.
引用
收藏
页数：2
相关论文
共 50 条
  • [21] Multidimensional noise model and simulation of VCSEL devices
    Odermatt, S
    Luisier, M
    Schmithüsen, B
    Streiff, M
    Hövel, R
    Witzigmann, B
    Physics and Simulation of Optoelectronic Devices XIII, 2005, 5722 : 211 - 220
  • [22] Refractive index control by quantum well intermixing for light confinement in VCSEL
    Saito, Minoru
    Moriwaki, Shouhei
    Miyamoto, Tomoyuki
    2016 COMPOUND SEMICONDUCTOR WEEK (CSW) INCLUDES 28TH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE & RELATED MATERIALS (IPRM) & 43RD INTERNATIONAL SYMPOSIUM ON COMPOUND SEMICONDUCTORS (ISCS), 2016,
  • [23] CHARACTERIZATION of ION IMPLANTATION QUANTUM WELL INTERMIXING for CARRIER CONFINEMENT of VCSEL
    Moriwaki, Shouhei
    Saitou, Minoru
    Kunisada, Shougo
    Miyamoto, Tomoyuki
    2015 20TH MICROOPTICS CONFERENCE (MOC), 2015,
  • [24] The effects of carrier dependant nonlinear gain on quantum well VCSEL characteristics
    Mahtab Aghaeipour
    Vahid Ahmadi
    Elham Darabi
    Optical and Quantum Electronics, 2013, 45 : 115 - 126
  • [25] The effects of carrier dependant nonlinear gain on quantum well VCSEL characteristics
    Aghaeipour, Mahtab
    Ahmadi, Vahid
    Darabi, Elham
    OPTICAL AND QUANTUM ELECTRONICS, 2013, 45 (02) : 115 - 126
  • [26] Non-uniform oxide aperture design of 2-D VCSEL array
    Luo, Yicheng
    Jin, Dongyue
    Liu, Jianing
    Guan, Baolu
    Zhou, Dingfu
    Song, Haizhi
    Dai, Qian
    2024 4TH INTERNATIONAL CONFERENCE ON ELECTRON DEVICES AND APPLICATIONS, 2025, 2937
  • [27] Mechanism of the polarization control in intracavity-contacted VCSEL with rhomboidal oxide current aperture
    Bobrov, M. A.
    Maleev, N. A.
    Blokhin, S. A.
    Kuzmenkov, A. G.
    Vasil'ev, A. P.
    Blokhin, A. A.
    Kulagina, M. M.
    Guseva, Yu A.
    Troshkov, S. I.
    Ustinov, V. M.
    3RD INTERNATIONAL SCHOOL AND CONFERENCE ON OPTOELECTRONICS, PHOTONICS, ENGINEERING AND NANOSTRUCTURES (SAINT PETERSBURG OPEN 2016), 2016, 741
  • [28] Simulation of a new type of oxide confined 850 nm VCSEL
    Mitani, S. M.
    Alias, M. S.
    Choudhury, P. K.
    TENCON 2006 - 2006 IEEE REGION 10 CONFERENCE, VOLS 1-4, 2006, : 436 - +
  • [29] Low thermal resistance, high-speed 980 nm asymmetric intracavity-contacted oxide-aperture VCSELs
    Song, Y. M.
    Chang, K. S.
    Na, B. H.
    Yu, J. S.
    Lee, Y. T.
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2009, 206 (07): : 1631 - 1635
  • [30] Efficient, High-Data-Rate, Tapered Oxide-Aperture Vertical-Cavity Surface-Emitting Lasers
    Chang, Yu-Chia
    Coldren, Larry A.
    IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 2009, 15 (03) : 704 - 715
12345