Turn-off analysis of PT and NPT IGBTs in zero-current switching

被引：0
|
作者：
Lefebvre, S
Forest, F
Costa, F
Arnould, J
机构：
[1] ENSEA, ECS, F-95014 Cergy Pontoise, France
[2] ENS Cachan, LESIR, F-94230 Cachan, France
[3] IBS, F-13850 Greasque, France
来源：
IEE PROCEEDINGS-CIRCUITS DEVICES AND SYSTEMS | 1998年 / 145卷 / 03期
关键词：
punch-through IGBT; non-punch-through IGBT; zero-current switching;
D O I：
10.1049/ip-cds:19981874
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The lower turn-off losses in zero-current switching (ZCS) converters as compared to the conventional hard switching mode using insulated gate bipolar transistors (IGBT). depends on the intrinsic bipolar Junction transistor structure. Whichever the IGBT type may be, a significant part of the stored charge is removed from the base of the intrinsic bipolar junction transistor in ZCS because of the spontaneous current decrease, and because of the antiparallel diode turn-on. The turn-off loss reduction is especially significant when the carrier lifetime is low.
引用
收藏
页码：185 / 191
页数：7
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