Analysis of turn-off failure in MCT

被引：0
|
作者：
Zhang, Heming [1 ]
Dai, Xianying [1 ]
Wang, Wei [1 ]
机构：
[1] Xidian Univ, Xi'an, China
来源：
Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors | 2000年 / 21卷 / 03期
关键词：
Electric resistance - Failure analysis - Gates (transistor) - MOS devices - Testing;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
The mechanism of turn-off failure in MCT has been simulated and verified by test. It is shown that the nonuniform temperature distribution in the device and the unequal gate resistance between cells cause current crowding in part of the MCT cells and result in the device failing to turn-off.
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页码：280 / 285
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