Effects of the conduction-band nonparabolicity on the gain in bulk InAsSb semiconductor lasers

被引：2
|
作者：
Paskov, PP [1 ]
机构：
[1] Inst Elect, Sofia 1784, Bulgaria
来源：
JOURNAL OF APPLIED PHYSICS | 1999年 / 85卷 / 11期
关键词：
D O I：
10.1063/1.370617
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
A simple model for the optical gain in bulk semiconductors with a nonparabolic band structure is developed. The model is applied to the calculation of gain spectrum and gain-carrier-density dependence in InAsxSb1-x. A comparison with the conventional parabolic band model is also performed. The obtained results show the necessity to include the conduction-band nonparabolicity in modeling of lasers based on narrow-gap semiconductor materials. (C) 1999 American Institute of Physics. [S0021-8979(99)02311-7].
引用
收藏
页码：7967 / 7969
页数：3
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