Effects of the conduction-band nonparabolicity on the gain in bulk InAsSb semiconductor lasers

A simple model for the optical gain in bulk semiconductors with a nonparabolic band structure is developed. The model is applied to the calculation of gain spectrum and gain-carrier-density dependence in InAsxSb1-x. A comparison with the conventional parabolic band model is also performed. The obtained results show the necessity to include the conduction-band nonparabolicity in modeling of lasers based on narrow-gap semiconductor materials. (C) 1999 American Institute of Physics. [S0021-8979(99)02311-7].