The impact of plasma charging damage on the RF performances of deep-submicron silicon MOSFET

被引：0
|
作者：
Pantisano, L [1 ]
Cheung, KP [1 ]
Smith, P [1 ]
Chen, CY [1 ]
Hwang, D [1 ]
Fiorillo, S [1 ]
Keller, R [1 ]
Paccagnella, A [1 ]
机构：
[1] Agere Syst, Murray Hill, NJ 07974 USA
来源：
2001 6TH INTERNATIONAL SYMPOSIUM ON PLASMA- AND PROCESS-INDUCED DAMAGE | 2001年
关键词：
D O I：
10.1109/PPID.2001.929978
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：56 / 59
页数：4
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