Interaction between magnetic layers in structures with narrow-gap IV-VI semiconductors

被引：19
|
作者：
Dugaev, VK
Litvinov, VI
Dobrowolski, W
Story, T
机构：
[1] Inst Mat Sci Problems, Chernovtsy Dept, UA-274001 Chernovtsy, Ukraine
[2] Polish Acad Sci, Inst Phys, PL-02668 Warsaw, Poland
来源：
SOLID STATE COMMUNICATIONS | 1999年 / 110卷 / 06期
关键词：
semiconductors; nanostructure; quantum wells;
D O I：
10.1016/S0038-1098(98)00609-7
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The results of calculation of the indirect exchange interaction between magnetic layers are presented for the case of a structure with narrow-gap semiconducting TV-VI quantum well. The main mechanism is a magnetic polarization of the size-quantized electrons and holes inside the well. This type of interaction is suggested for the explanation of recent experiments on EuS/PbS structures. (C) 1999 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码：351 / 355
页数：5
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