Stacked high voltage switch based on SiCVJFETs

被引：21

作者：

Friedrichs, P ^{[1
]}

Mitlehner, H ^{[1
]}

Schörner, R ^{[1
]}

Dohnke, KO ^{[1
]}

Elpelt, R ^{[1
]}

Stephani, D ^{[1
]}

机构：

[1] SiCED Elect Dev GmbH & Co KG, D-91052 Erlangen, Germany

来源：

ISPSD'03: 2003 IEEE 15TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS PROCEEDINGS | 2003年

关键词：

D O I：

10.1109/ISPSD.2003.1225249

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Based on the serial connection of high voltage SiC VJFETs a stacked solution able to block very high voltages is presented. By connecting VJFETs in series, a unipolar high voltage switch with 8kV blocking voltage and an on-resistance of 2Omega was fabricated. The basic functions of this stacked switch are analyzed by discussing the electrical behavior. The static and dynamic behavior indicate an interesting perspective for high voltage and high power applications. Especially the dynamics are carefully analyzed using a low voltage version of the stacked solution. Additionally, the potential of SiC VJFETs as a 4kV single switch is demonstrated.

引用

页码：139 / 142

页数：4

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