High-Voltage Analog Switch Inspired by Stacked MOSFET-Based RF Switches

被引：1
|
作者：
Solomko, Valentyn [1 ]
Syroiezhin, Semen [1 ]
Weigel, Robert [2 ]
机构：
[1] Infineon Technol AG, Radio Frequency & Sensors, D-85579 Neubiberg, Germany
[2] Univ Erlangen Nurnberg, Inst Elect Engn, D-91058 Erlangen, Germany
来源：
IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS | 2023年 / 70卷 / 11期
关键词：
Actuators; charge-pump; CMOS switch; floating voltage source; high-voltage switch; linear switch; stacked switch; tunable devices; CMOS; DRIVER;
D O I：
10.1109/TCSII.2023.3286328
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A biasing concept for a stacked MOSFET-based RF switch enabling high DC voltage handling is proposed, making the device suitable for analog switching applications. The biasing network is based on floating bipolar voltage sources generating gate bias voltages for individual transistors in stack in accordance with the applied DC signal. A 10-stack, 2.32 Omega shunt switch implemented in a 65nm SOI-CMOS switch process demonstrates 0.1 dB bandwidth of 3 GHz with DC voltage handling ranging between-7V and +17V and RF power handling capabilities of 26 dBm at 900 MHz in OFF-state.
引用
收藏
页码：4008 / 4012
页数：5
相关论文
共 50 条
  • [1] High-Voltage MOSFET-Based Stacked RF Switch With Extended Bandwidth Down to DC
    Syroiezhin, Semen
    Weigel, Robert
    Solomko, Valentyn
    [J]. IEEE SOLID-STATE CIRCUITS LETTERS, 2023, 6 : 129 - 132
  • [2] MOSFET-Based RF Switch With Active Biasing
    Solomko, Valentyn
    Syroiezhin, Semen
    Tayari, Danial
    Essel, Jochen
    Weigel, Robert
    [J]. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2023, 71 (12) : 5295 - 5303
  • [3] A CMOS Short Pulse Generator with A High-Voltage Stacked MOSFET Switch
    Sun, Jiwei
    Wang, Pingshan
    [J]. 2014 IEEE 57TH INTERNATIONAL MIDWEST SYMPOSIUM ON CIRCUITS AND SYSTEMS (MWSCAS), 2014, : 414 - 417
  • [4] Arbitrary Shaped High-Voltage RF Switch
    Oezdamar, Oguzhan
    Syroiezhin, Semen
    Cattaneo, Andrea
    Solomko, Valentyn
    [J]. IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS, 2024, 71 (03) : 1571 - 1575
  • [5] High-Voltage CMOS RF Switch with Active Biasing
    Solomko, Valentyn
    Syroiezhin, Semen
    Tayari, Danial
    Essel, Jochen
    Weigel, Robert
    [J]. ESSCIRC 2022- IEEE 48TH EUROPEAN SOLID STATE CIRCUITS CONFERENCE (ESSCIRC), 2022, : 297 - 300
  • [6] A 4H-SiC MOSFET-Based ESD Protection With Improved Snapback Characteristics for High-Voltage Applications
    Do, Kyoung-Il
    Won, Jong-Il
    Koo, Yong-Seo
    [J]. IEEE TRANSACTIONS ON POWER ELECTRONICS, 2021, 36 (05) : 4921 - 4926
  • [7] Stacked high voltage switch based on SiCVJFETs
    Friedrichs, P
    Mitlehner, H
    Schörner, R
    Dohnke, KO
    Elpelt, R
    Stephani, D
    [J]. ISPSD'03: 2003 IEEE 15TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS PROCEEDINGS, 2003, : 139 - 142
  • [8] MOSFET-based, analog circuit calculates square root
    Lahiri, Abhirup
    [J]. EDN, 2009, 54 (04) : 52 - +
  • [9] A high-voltage high-current switch on the basis of triggered vacuum switches
    M. R. Akhmetgareev
    V. P. Ivanov
    L. P. Menakhin
    V. A. Sidorov
    [J]. Instruments and Experimental Techniques, 2016, 59 : 362 - 367
  • [10] A high-voltage high-current switch on the basis of triggered vacuum switches
    Akhmetgareev, M. R.
    Ivanov, V. P.
    Menakhin, L. P.
    Sidorov, V. A.
    [J]. INSTRUMENTS AND EXPERIMENTAL TECHNIQUES, 2016, 59 (03) : 362 - 367
12345