High-Voltage Analog Switch Inspired by Stacked MOSFET-Based RF Switches

被引：1

作者：

Solomko, Valentyn ^{[1
]}

Syroiezhin, Semen ^{[1
]}

Weigel, Robert ^{[2
]}

机构：

[1] Infineon Technol AG, Radio Frequency & Sensors, D-85579 Neubiberg, Germany

[2] Univ Erlangen Nurnberg, Inst Elect Engn, D-91058 Erlangen, Germany

来源：

IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS | 2023年 / 70卷 / 11期

关键词：

Actuators; charge-pump; CMOS switch; floating voltage source; high-voltage switch; linear switch; stacked switch; tunable devices; CMOS; DRIVER;

D O I：

10.1109/TCSII.2023.3286328

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A biasing concept for a stacked MOSFET-based RF switch enabling high DC voltage handling is proposed, making the device suitable for analog switching applications. The biasing network is based on floating bipolar voltage sources generating gate bias voltages for individual transistors in stack in accordance with the applied DC signal. A 10-stack, 2.32 Omega shunt switch implemented in a 65nm SOI-CMOS switch process demonstrates 0.1 dB bandwidth of 3 GHz with DC voltage handling ranging between-7V and +17V and RF power handling capabilities of 26 dBm at 900 MHz in OFF-state.

引用

页码：4008 / 4012

页数：5

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