Behavior of high voltage SiCVJFETs under avalanche conditions

被引：0
|
作者：
Friedrichs, P [1 ]
Reimann, T [1 ]
机构：
[1] SiCED Elect Dev GmbH & Co KG, Gunther Scharowsky Str 1, D-91058 Erlangen, Germany
来源：
APEC 2006: TWENTY-FIRST ANNUAL IEEE APPLIED POWER ELECTRONICS CONFERENCE AND EXPOSITION, VOLS 1-3 | 2006年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The paper discusses the behavior of SiC VJFETs under avalanche conditions. Safe operation under avalanche is a precondition for the effective use of switching devices in switch mode power supplies. It will be shown how a VJFET device can be designed avalanche stable. Measurements of the avalanche capability of realized devices prove the expected ruggedness of SiC components. Achieved single pulse energies exceed the values possible with silicon components of the same die size.
引用
收藏
页码：1677 / 1683
页数：7
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