Modeling Nanoscale III-V Channel MOSFETs with the Self-Consistent Multi-Valley/Multi-Subband Monte Carlo Approach

被引：0
|
作者：
Caruso, Enrico [1 ,2 ]
Esseni, David [1 ]
Gnani, Elena [3 ]
Lizzit, Daniel [1 ]
Palestri, Pierpaolo [1 ]
Pin, Alessandro [1 ]
Puglisi, Francesco Maria [4 ]
Selmi, Luca [4 ]
Zagni, Nicolo [4 ]
机构：
[1] Univ Udine, Polytechn Dept Engn & Architecture, I-33100 Udine, Italy
[2] Infineon Technol Austria AG, Siemensstrasse 2, A-9500 Villach, Austria
[3] Univ Bologna, ARCES Res Ctr, Dept Elect Engn DEI, I-40136 Bologna, Italy
[4] Univ Modena & Reggio Emilia, Dept Engn Enzo, Via P. Vivarelli 10, I-41125 Modena, Italy
来源：
ELECTRONICS | 2021年 / 10卷 / 20期
关键词：
III-V semiconductors; modeling and simulation; Monte Carlo; TRANSPORT; FETS; SEMICONDUCTORS; QUANTIZATION; SIMULATION; SILICON; PLANAR; LENGTH; TRAPS; INAS;
D O I：
10.3390/electronics10202472
中图分类号：
TP [自动化技术、计算机技术];
学科分类号：
0812 ;
摘要：
We describe the multi-valley/multi-subband Monte Carlo (MV-MSMC) approach to model nanoscale MOSFETs featuring III-V semiconductors as channel material. This approach describes carrier quantization normal to the channel direction, solving the Schrodinger equation while off-equilibrium transport is captured by the multi-valley/multi-subband Boltzmann transport equation. In this paper, we outline a methodology to include quantum effects along the transport direction (namely, source-to-drain tunneling) and provide model verification by comparison with Non-Equilibrium Green's Function results for nanoscale MOSFETs with InAs and InGaAs channels. It is then shown how to use the MV-MSMC to calibrate a Technology Computer Aided Design (TCAD) simulation deck based on the drift-diffusion model that allows much faster simulations and opens the doors to variability studies in III-V channel MOSFETs.</p>
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页数：15
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