Modeling Nanoscale III-V Channel MOSFETs with the Self-Consistent Multi-Valley/Multi-Subband Monte Carlo Approach

被引：0

作者：

Caruso, Enrico ^{[1
,2
]}

Esseni, David ^{[1
]}

Gnani, Elena ^{[3
]}

Lizzit, Daniel ^{[1
]}

Palestri, Pierpaolo ^{[1
]}

Pin, Alessandro ^{[1
]}

Puglisi, Francesco Maria ^{[4
]}

Selmi, Luca ^{[4
]}

Zagni, Nicolo ^{[4
]}

机构：

[1] Univ Udine, Polytechn Dept Engn & Architecture, I-33100 Udine, Italy

[2] Infineon Technol Austria AG, Siemensstrasse 2, A-9500 Villach, Austria

[3] Univ Bologna, ARCES Res Ctr, Dept Elect Engn DEI, I-40136 Bologna, Italy

[4] Univ Modena & Reggio Emilia, Dept Engn Enzo, Via P. Vivarelli 10, I-41125 Modena, Italy

来源：

ELECTRONICS | 2021年 / 10卷 / 20期

关键词：

III-V semiconductors; modeling and simulation; Monte Carlo; TRANSPORT; FETS; SEMICONDUCTORS; QUANTIZATION; SIMULATION; SILICON; PLANAR; LENGTH; TRAPS; INAS;

D O I：

10.3390/electronics10202472

中图分类号：

TP [自动化技术、计算机技术];

学科分类号：

0812 ;

摘要：

We describe the multi-valley/multi-subband Monte Carlo (MV-MSMC) approach to model nanoscale MOSFETs featuring III-V semiconductors as channel material. This approach describes carrier quantization normal to the channel direction, solving the Schrodinger equation while off-equilibrium transport is captured by the multi-valley/multi-subband Boltzmann transport equation. In this paper, we outline a methodology to include quantum effects along the transport direction (namely, source-to-drain tunneling) and provide model verification by comparison with Non-Equilibrium Green's Function results for nanoscale MOSFETs with InAs and InGaAs channels. It is then shown how to use the MV-MSMC to calibrate a Technology Computer Aided Design (TCAD) simulation deck based on the drift-diffusion model that allows much faster simulations and opens the doors to variability studies in III-V channel MOSFETs.</p>

引用

页数：15

共 27 条

[21] Comparative study on nano-scale III-V MOSFETs with various channel materials using quantum-corrected Monte Carlo simulation
Homma, Takahiro
Hasegawa, Kei
Watanabe, Hisanao
Hara, Shinsuke
Fujishiro, Hiroki I.
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 9, NO 2, 2012, 9 (02):
[22] Fully quantum self-consistent study of ultimate DG-MOSFETs including realistic scattering using a Wigner Monte-Carlo approach
Querlioz, D.
Saint-Martin, J.
Do, V. -N.
Bournel, A.
Dollfus, P.
2006 INTERNATIONAL ELECTRON DEVICES MEETING, VOLS 1 AND 2, 2006, : 685 - +
[23] Comparative study on drive current of III-V semiconductor, Ge and Si channel n-MOSFETs based on quantum-corrected Monte Carlo simulation
Mori, Takashi
Azuma, Yusuke
Tsuchiya, Hideaki
Miyoshi, Tanroku
IEEE TRANSACTIONS ON NANOTECHNOLOGY, 2008, 7 (02) : 237 - 241
[24] Interaction of the solar wind with interstellar neutral gas: a comparison between self-consistent Monte-Carlo and multi-fluid approaches
Heerikhuisen, J
Florinski, V
Zank, GP
Mueller, HR
Proceedings of the Conference Solar Wind 11 - SOHO 16: CONNECTING SUN AND HELIOSPHERE, 2005, 592 : 339 - 342
[25] Computer modeling of polymer stars in variable solvent conditions: a comparison of MD simulations, self-consistent field (SCF) modeling and novel hybrid Monte Carlo SCF approach
Kazakov, Alexander D.
Prokacheva, Varvara M.
Uhlik, Filip
Kosovan, Peter
Leermakers, Frans A. M.
SOFT MATTER, 2021, 17 (03) : 580 - 591
[26] Self-consistent full band two-dimensional Monte Carlo two-dimensional Poisson device solver for modeling SiGe p-channel devices
Krishnan, S.
Fischetti, M.
Vasileska, D.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2006, 24 (04): : 1997 - 2003
[27] A direct Monte Carlo approach for the modeling of neutrals at the plasma edge and its self-consistent coupling with the 2D fluid plasma edge turbulence model HESEL
Kvist, Kristoffer
Thrysoe, Alexander Simon
Haugbolle, Troels
Nielsen, Anders Henry
PHYSICS OF PLASMAS, 2024, 31 (03)

← 1 2 3 →