Novel electron optics for large sub-field electron beam projection lithography (EPL)

被引:4
|
作者
Fukui, S [1 ]
Shimizu, H [1 ]
Ren, WM [1 ]
Suzuki, S [1 ]
Okamoto, K [1 ]
机构
[1] Nikon Inc, Kumagaya, Saitama 3608559, Japan
关键词
D O I
10.1117/12.484934
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
In Electron-beam Projection Lithography (EPL), achieving the requirements for the ITRS 45 nm roadmap node will require decreasing simultaneously both the beam blur from the Coulomb interaction effects and the geometrical aberrations from their present values. Because next generation lithography tools are required to have both high resolution and throughput, the Coulomb effect becomes more of an issue. In this paper, we propose a novel concept to effectively decrease the Coulomb effect. Based on this new concept we develop an EPL electron optical system in which not only the Coulomb effect but also the geometrical aberrations are greatly reduced. We report on the properties of this new EPL optical system.
引用
下载
收藏
页码:512 / 520
页数:9
相关论文
共 50 条
  • [31] Proximity effect correction by pattern modified stencil mask in large-field projection electron-beam lithography
    Kobinata, H
    Yamashita, H
    Nomura, E
    Nakajima, K
    Kuroki, Y
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1998, 37 (12B): : 6767 - 6773
  • [32] Simulation of electron and ion beam optics for high throughput lithography
    Zhu, XQ
    Liu, HN
    Munro, E
    Rouse, J
    MICROPROCESSES AND NANOTECHNOLOGY 2000, DIGEST OF PAPERS, 2000, : 134 - 135
  • [33] Mechanical modeling of projection electron-beam lithography masks
    Univ of Wisconsin-Madison, Stoughton, United States
    Jpn J Appl Phys Part 1 Regul Pap Short Note Rev Pap, 12 B (7564-7569):
  • [34] Defect printability analysis in electron beam cell projection lithography
    Itoh, K
    Yamashita, H
    Ema, T
    Nozue, H
    PHOTOMASK AND X-RAY MASK TECHNOLOGY III, 1996, 2793 : 230 - 240
  • [35] Mechanical modeling of projection electron-beam lithography masks
    Dicks, GA
    Engelstad, RL
    Lovell, EG
    Liddle, JA
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1997, 36 (12B): : 7564 - 7569
  • [36] Direct measurement of Coulomb effects in electron beam projection lithography
    Yahiro, T
    Suzuki, S
    Irita, T
    Hirayanagi, N
    Shimizu, H
    Kojima, S
    Morita, K
    Kawata, S
    Okino, T
    Suzuki, K
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2001, 19 (06): : 2468 - 2473
  • [37] ELECTRON-BEAM CELL-PROJECTION LITHOGRAPHY SYSTEM
    SAKITANI, Y
    YODA, H
    TODOKORO, H
    SHIBATA, Y
    YAMAZAKI, T
    OHBITU, K
    SAITOU, N
    MORIYAMA, S
    OKAZAKI, S
    MATUOKA, G
    MURAI, F
    OKUMURA, M
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1992, 10 (06): : 2759 - 2763
  • [39] Wafer heating analysis for electron-beam projection lithography
    Chang, J
    Nellis, GF
    Engelstad, RL
    Lovell, EG
    Sogard, MR
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2003, 21 (06): : 2657 - 2662
  • [40] Optimization of PHS-based chemically amplified negative resist for 100-kV electron-beam projection lithography (EPL)
    Miyasaka, M
    Tokunaga, K
    Koba, F
    Yamashita, H
    Nakajima, K
    Nozue, H
    EMERGING LITHOGRAPHIC TECHNOLOGIES IV, 2000, 3997 : 344 - 351