Sequential 3D Process Integration: Opportunities For Low Temperature Processing

被引：6
|
作者：
Kerdiles, S. [1 ,2 ]
Acosta-Alba, P. [1 ,2 ]
Mathieu, B. [1 ,2 ]
Veillerot, M. [1 ,2 ]
Denis, H. [1 ,2 ]
Aussenac, F. [1 ,2 ]
Mazzamuto, F. [3 ]
Toque-Tresonne, I. [3 ]
Huet, K. [3 ]
Samson, M-P. [4 ]
Previtali, B. [1 ,2 ]
Brunet, L. [1 ,2 ]
Batude, P. [1 ,2 ]
Fenouillet-Beranger, C. [1 ,2 ]
机构：
[1] Univ Grenoble Alpes, F-38000 Grenoble, France
[2] CEA, LETI, Minatec Campus,17 Rue Martyrs, F-38054 Grenoble 9, France
[3] SCREEN LASSE, 14-38 Rue Alexandre,Bldg D, F-92230 Gennevilliers, France
[4] STMicroelectronics, 850 Rue Jean Monnet, F-38920 Crolles, France
来源：
SEMICONDUCTOR PROCESS INTEGRATION 10 | 2017年 / 80卷 / 04期
关键词：
D O I：
10.1149/08004.0215ecst
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
3D sequential integration motivates the development of low temperature technological modules. Alternatively to classical nonselective annealing techniques, sub-microsecond laser annealing allows high temperature treatment of a sub-micrometer surface region while keeping the underneath structures at much lower temperature. In this contribution, we present recent advances in ultra-violet nanosecond laser annealing targeting monolithic 3D integration. Emphasis will be put on the demonstration of dopant activation in thin implanted SOI structures, simulating source and drain regions. Cu/ULK interconnects stability upon nanosecond laser annealing is also investigated.
引用
收藏
页码：215 / 225
页数：11
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