Superior Memory of Er-Doped TiO2 Nanowire MOS Capacitor

The capacitive memory of erbium (Er)-doped nanowire (NW) has been reported. The TiO2 and Er:TiO2 NWs' active layer sandwiched between Au and Si has been used for this study. The capacitance (C)-voltage (V) and conductance (G)-voltage (V) characteristics have been studied for different high frequencies ranging from 1 to 10 MHz. Most importantly, C-V hysteresis for various sweeping voltages (+/- 2, +/- 4, +/- 6, +/- 8, and +/- 10 V) was measured for both the devices. Er:TiO2 NW device depicted an extreme C-V hysteresis as well as memory window of similar to 3.52 V at +/- 10 V. Moreover, Er:TiO2 NW device also exhibited a lowvalue of interface trap density D-it similar to 8.72x10(10) eV(-1)cm(-2) and good endurance and retention properties.