Inverse and oscillatory magnetoresistance in Fe(001)/MgO/Cr/Fe magnetic tunnel junctions

被引：11
|
作者：
Zhang, Jia [3 ]
Wang, Yan [3 ]
Zhang, X. -G. [1 ,2 ]
Han, X. F. [3 ]
机构：
[1] Oak Ridge Natl Lab, Ctr Nanophase Mat Sci & Comp Sci, Oak Ridge, TN 37831 USA
[2] Oak Ridge Natl Lab, Div Math, Oak Ridge, TN 37831 USA
[3] Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, State Key Lab Magnetism, Beijing 100190, Peoples R China
来源：
PHYSICAL REVIEW B | 2010年 / 82卷 / 13期
关键词：
LAYER; CONDUCTION;
D O I：
10.1103/PhysRevB.82.134449
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The effect of Cr(001) insertion layers in Fe(001)/MgO/Cr/Fe magnetic tunneling junctions is studied from first principles. It is shown that with the increase in the Cr(001) layer thickness, the tunneling magnetoresistance (TMR) first decreases rapidly and then oscillates with a two-monolayer period. At some thicknesses, the oscillation leads to a sign reversal of the TMR. The oscillatory interfacial Cr moment at the Cr-MgO interface as a function of the Cr layer thickness, which arises from the layer-antiferromagnetic ordering of Cr, is the cause for the oscillatory TMR.
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页数：6
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