Tailoring tunnel magnetoresistance by ultrathin Cr and Co interlayers: A first-principles investigation of Fe/MgO/Fe junctions

被引:11
|
作者
Bose, Peter [1 ,2 ]
Zahn, Peter [1 ]
Henk, Juergen [3 ]
Mertig, Ingrid [1 ,3 ]
机构
[1] Univ Halle Wittenberg, Inst Phys, D-06099 Halle, Saale, Germany
[2] Int Max Planck Res Sch Sci & Technol Nanostruct, D-06120 Halle, Saale, Germany
[3] Max Planck Inst Microstruct Phys, Halle, Saale, Germany
来源
PHYSICAL REVIEW B | 2010年 / 82卷 / 01期
关键词
KOHN-ROSTOKER METHOD; ROOM-TEMPERATURE; SPINTRONICS;
D O I
10.1103/PhysRevB.82.014412
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We report on systematic ab initio investigations of Co and Cr interlayers embedded in Fe(001)/MgO/Fe(001) magnetic tunnel junctions, focusing on the changes in the electronic structure and the transport properties with interlayer thickness. The results of spin-dependent ballistic transport calculations reveal options to specifically manipulate the tunnel magnetoresistance ratio. The resistance-area products and the tunnel magnetoresistance ratios show a monotonous trend with distinct oscillations as a function of the Cr thickness. These modulations are directly addressed and interpreted by means of magnetic structures in the Cr films and by complex band-structure effects. The characteristics for embedded Co interlayers are considerably influenced by interface resonances which are analyzed by the local electronic structure.
引用
收藏
页数:7
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