Dynamical observation of photo-Dember effect on semi-insulating GaAs using femtosecond core-level photoelectron spectroscopy

被引：3

作者：

Oguri, Katsuya ^{[1
]}

Tsunoi, Takanobu ^{[1
]}

Kato, Keiko ^{[1
]}

Nakano, Hidetoshi ^{[1
]}

Nishikawa, Tadashi ^{[1
]}

Tateno, Kouta ^{[1
]}

Sogawa, Tetsuomi ^{[1
]}

Gotoh, Hideki ^{[1
]}

机构：

[1] NTT Corp, NTT Basic Res Labs, Atsugi, Kanagawa 2430198, Japan

来源：

APPLIED PHYSICS EXPRESS | 2015年 / 8卷 / 02期

关键词：

PHOTOEMISSION; LASER; EMISSION;

D O I：

10.7567/APEX.8.022401

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We investigated ultrafast photogenerated carrier dynamics on a semi-insulating GaAs surface using femtosecond time-resolved core-level photoelectron spectroscopy. We observed a transient change in the surface potential where the Ga-3d core-level peak instantaneously shifted by similar to 350 meV toward a higher binding energy within 2 ps of a 100 fs laser irradiation. A comparison of the experimental results with numerical simulations based on a drift-diffusion model of a semi-insulating semiconductor revealed that the transient surface potential change was mainly due to the photo-Dember effect, whereby the large difference in the carrier diffusion between the electron and hole instantaneously induced a surface photovoltage. (C) 2015 The Japan Society of Applied Physics

引用

页数：4

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