Physical behaviour of nanocrystalline ZnS layers grown by close-spaced evaporation

被引:0
|
作者
Prathap, P. [1 ]
Subbaiah, Y. P. V. [1 ]
Reddy, K. T. Ramakrishna [1 ]
机构
[1] Sri Venkateswara Univ, Dept Phys, Thin Film Lab, Tirupati 517502, Andhra Pradesh, India
关键词
ZnS films; close-spaced evaporation; structure; photoluminescence properties;
D O I
10.1080/15533170701471802
中图分类号
O61 [无机化学];
学科分类号
070301 ; 081704 ;
摘要
Nano-crystalline ZnS films were deposited onto glass substrates by close-spaced. evaporation with different deposition rates in the range, 10-60 angstrom/sec at a substrate temperature of 300 degrees C. The as-grown layers were characterized with X-ray diffractometer (XRD), atomic force microscope (AFM), energy dispersive analysis of X-rays (EDAX) and fluorescence spectrophotometer. The studies showed that the optimum rate of deposition for the growth of near stoichiometric ZnS layers was 20 angstrom/sec. The films exhibited cubic structure in the entire range of deposition rates. The AFM data revealed that the films had nanosized grains with a grain size of similar to 40 nn. The effect of rate of deposition onto photoluminescence behaviour was also studied.
引用
收藏
页码:493 / 496
页数:4
相关论文
共 50 条
  • [41] Preparation of SnS thin films with gear-like sheet appearance by close-spaced vacuum thermal evaporation
    Shao, Zhangpeng
    Shi, Chengwu
    Chen, Junjun
    Zhang, Yanru
    INTERNATIONAL JOURNAL OF MODERN PHYSICS B, 2017, 31 (16-19):
  • [42] Low temperature synthesis of photoconductive BaSi2 films via mechanochemically assisted close-spaced evaporation
    Hara, Kosuke O.
    Yamamoto, Chiaya
    Yamanaka, Junji
    Arimoto, Keisuke
    MATERIALS ADVANCES, 2021, 2 (20): : 6713 - 6721
  • [43] CuIn1-xGaxS2 wide gap absorbers grown by close-spaced vapor transport
    Moudakir, T
    Djessas, K
    Massé, G
    JOURNAL OF CRYSTAL GROWTH, 2004, 270 (3-4) : 517 - 526
  • [44] Efficient n-GaAs Photoelectrodes Grown by Close-Spaced Vapor Transport from a Solid Source
    Ritenour, Andrew J.
    Cramer, Richard C.
    Levinrad, Solomon
    Boettcher, Shannon W.
    ACS APPLIED MATERIALS & INTERFACES, 2012, 4 (01) : 69 - 73
  • [45] Growth and characterization of close-spaced vapor transport GaAs layers, using atomic hydrogen as the initial reactant
    Gomez, E
    Silva, R
    SilvaAndrade, F
    GraciaJimenez, JM
    REVISTA MEXICANA DE FISICA, 1997, 43 (05) : 785 - 794
  • [46] SEM and EDS characterization of GaAs layers grown by the close-spaced vapor transport technique at four different geometries using atomic hydrogen as initial reactant
    Gomez, E
    Silva, R
    SilvaAndrade, F
    REVISTA MEXICANA DE FISICA, 1997, 43 (02) : 290 - 299
  • [47] Substrate-temperature effect on the microstructural and optical properties of ZnS thin films obtained by close-spaced vacuum sublimation
    Kurbatov, D.
    Opanasyuk, A.
    Khlyap, H.
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2009, 206 (07): : 1549 - 1557
  • [48] Low-Cost Growth of III-V Layers on Si Using Close-Spaced Vapor Transport
    Boucher, Jason W.
    Greenaway, Ann L.
    Ritenour, Andrew J.
    Davis, Allison L.
    Bachman, Benjamin F.
    Aloni, Shaul
    Boettcher, Shannon W.
    2015 IEEE 42ND PHOTOVOLTAIC SPECIALIST CONFERENCE (PVSC), 2015,
  • [49] AN INVESTIGATION ON STRUCTURAL AND ELECTRICAL PROPERTIES OF CLOSE-SPACED SUBLIMATION GROWN CdTe THIN FILMS IN DIFFERENT GROWTH CONDITIONS
    Enam, F. M. T.
    Rahman, K. S.
    Kamaruzzaman, M. I.
    Sobayel, K.
    Aktharuzzaman, M.
    Amin, N.
    CHALCOGENIDE LETTERS, 2017, 14 (04): : 125 - 131
  • [50] Structural and optical properties of Cu(In,Ga)Se2 grown by close-spaced vapor transport technique
    Bouloufa, A.
    Djessas, K.
    Todorovic, D.
    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2009, 12 (1-2) : 82 - 87