Physical behaviour of nanocrystalline ZnS layers grown by close-spaced evaporation

被引:0
|
作者
Prathap, P. [1 ]
Subbaiah, Y. P. V. [1 ]
Reddy, K. T. Ramakrishna [1 ]
机构
[1] Sri Venkateswara Univ, Dept Phys, Thin Film Lab, Tirupati 517502, Andhra Pradesh, India
关键词
ZnS films; close-spaced evaporation; structure; photoluminescence properties;
D O I
10.1080/15533170701471802
中图分类号
O61 [无机化学];
学科分类号
070301 ; 081704 ;
摘要
Nano-crystalline ZnS films were deposited onto glass substrates by close-spaced. evaporation with different deposition rates in the range, 10-60 angstrom/sec at a substrate temperature of 300 degrees C. The as-grown layers were characterized with X-ray diffractometer (XRD), atomic force microscope (AFM), energy dispersive analysis of X-rays (EDAX) and fluorescence spectrophotometer. The studies showed that the optimum rate of deposition for the growth of near stoichiometric ZnS layers was 20 angstrom/sec. The films exhibited cubic structure in the entire range of deposition rates. The AFM data revealed that the films had nanosized grains with a grain size of similar to 40 nn. The effect of rate of deposition onto photoluminescence behaviour was also studied.
引用
收藏
页码:493 / 496
页数:4
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