Analysis of ellipsometric and thermoreflectance spectra for P-based III-V compounds GaP and InP

被引：6
|
作者：
Yoshikawa, H
Adachi, S
机构：
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 1996年 / 35卷 / 12A期
关键词：
GaP; InP; dielectric constant; critical point; spectroscopic ellipsometry; thermoreflectance; modulation spectroscopy;
D O I：
10.1143/JJAP.35.5946
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Spectroscopic-ellipsometry (SE) and thermoreflectance (TR) spectra of GaP and InP are presented. Both measurements are carried out on the same samples in the 1.4-5.6-eV photon-energy range at room temperature. The measured SE and TR spectra reveal distinct structures at energies of the E(0), E(0) + Delta(0), E(1), E(0)(,), E(2) and E(2) + delta critical points. The Gamma(8)(v) --> X(6)(c) indirect-gap peak at 2.25eV can also be clearly seen in the TR spectrum of GaP. These spectra are analysed based on a simplified model of the interband transitions. The results agree well with the experimental SE and TR data over the entire range of photon energies.
引用
收藏
页码：5946 / 5954
页数：9
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