Analysis of ellipsometric and thermoreflectance spectra for P-based III-V compounds GaP and InP

被引:6
|
作者
Yoshikawa, H
Adachi, S
机构
关键词
GaP; InP; dielectric constant; critical point; spectroscopic ellipsometry; thermoreflectance; modulation spectroscopy;
D O I
10.1143/JJAP.35.5946
中图分类号
O59 [应用物理学];
学科分类号
摘要
Spectroscopic-ellipsometry (SE) and thermoreflectance (TR) spectra of GaP and InP are presented. Both measurements are carried out on the same samples in the 1.4-5.6-eV photon-energy range at room temperature. The measured SE and TR spectra reveal distinct structures at energies of the E(0), E(0) + Delta(0), E(1), E(0)(,), E(2) and E(2) + delta critical points. The Gamma(8)(v) --> X(6)(c) indirect-gap peak at 2.25eV can also be clearly seen in the TR spectrum of GaP. These spectra are analysed based on a simplified model of the interband transitions. The results agree well with the experimental SE and TR data over the entire range of photon energies.
引用
收藏
页码:5946 / 5954
页数:9
相关论文
共 50 条
  • [31] Fuzzy logic approaches to the analysis of HREM images of III-V compounds
    Hillebrand, R
    JOURNAL OF MICROSCOPY, 1998, 190 : 61 - 72
  • [32] Numerical simulation of solar cells based on III-V nitride compounds
    Ameur, K.
    Benamara, Z.
    Mazari, H.
    Benseddik, N.
    Khelifi, R.
    Mostefaoui, M.
    Benyahya, N.
    OPTICAL AND QUANTUM ELECTRONICS, 2014, 46 (01) : 193 - 200
  • [33] Study of the Capacitive Behaviour of the MIS Structures Based on Compounds III-V
    Taik, S.
    Tizi, S.
    Benamara, Z.
    Chellali, M.
    Amrani, M.
    Gruzza, B.
    AFRICAN REVIEW OF PHYSICS, 2008, 2 : 91 - 91
  • [34] Hetero-epitaxy of III-V Compounds lattice-matched to InP by MOCVD for Device Applications
    Tang, Chak Wah
    Li, Haiou
    Zhong, Zhenyu
    Ng, Kai Lun
    Lau, Kei May
    2009 IEEE 21ST INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE & RELATED MATERIALS (IPRM), 2009, : 136 - 139
  • [35] Rare-earth elements in the technology of III-V compounds and devices based on these compounds
    Gorelenok, AT
    Kamanin, AV
    Shmidt, NM
    SEMICONDUCTORS, 2003, 37 (08) : 894 - 914
  • [36] HETEROJUNCTIONS BASED ON II-IV-V2 AND III-V COMPOUNDS.
    Anshon, A.V.
    Karpovich, I.A.
    Safonov, A.A.
    Soviet physics journal, 1986, 29 (08): : 672 - 679
  • [37] Comparative Analysis of the Electroluminescence Efficiency in Type-I and Type-II Heterostructures Based on III-V Narrow-Gap Compounds
    Bazhenov, N. L.
    Mynbaev, K. D.
    Semakova, A. A.
    Zegrya, G. G.
    SEMICONDUCTORS, 2022, 56 (02) : 43 - 49
  • [38] Performance Analysis of III-V Based Long Wavelength QWIP
    Billaha, Md. Aref
    Das, Mukul K.
    2013 INTERNATIONAL CONFERENCE ON MICROWAVE AND PHOTONICS (ICMAP), 2013,
  • [39] Thermal Analysis of III-V HBV Diode Structures on InP, GaAs, Silicon and Diamond Substrates
    Malko, Aleksandra
    Tang, Aik Yean
    Vukusic, Josip
    Bryllert, Tomas
    Zhao, Huan
    Stake, Jan
    2013 38TH INTERNATIONAL CONFERENCE ON INFRARED, MILLIMETER, AND TERAHERTZ WAVES (IRMMW-THZ), 2013,
  • [40] USE OF SCANNING ELECTRON ACOUSTIC MICROSCOPY FOR III-V COMPOUNDS DEVICES ANALYSIS
    BRESSE, JF
    JOURNAL DE PHYSIQUE IV, 1991, 1 (C6): : 285 - 293