Electronic Properties of Rare-Earth Doped α-GaN

被引：2

作者：

Widianto, Muhammad Y. H. ^{[1
]}

Purqon, Acep ^{[2
]}

机构：

[1] Del Inst Technol, Dept Informat, Jl Sisingamangaraja, Toba Samosir 22381, Sumatera Utara, Indonesia

[2] Bandung Inst Technol, Phys Earth & Complex Syst, Jl Ganesha 10, Bandung 40132, Indonesia

来源：

INTERNATIONAL CONFERENCE ON ENERGY SCIENCES (ICES 2016) | 2017年 / 877卷

关键词：

ELECTROLUMINESCENCE; PHOTOLUMINESCENCE;

D O I：

10.1088/1742-6596/877/1/012027

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

We curly out DFT calculation to study electronic properties of rare-earth (RE) doped alpha-GaN. GGA approximation and ultrasoft pseudopotential used in this calculation. The bond length and tetrahedral angle of pristine alpha-GaN are slightly changed. The direct band gap of alpha-GaN was detected at 2.56 eV, this is 1 eV lower from experiment. Electronic structure measurement is also performed for RE doped GaN (RE= Pr, Eu, Er, Gd and Tm), which the configuration is Ga(l-x)NREx (x=0.125). The bond length of Ga-RE is vary from 2.12-2.23 angstrom. The impurity energy is found relative between conduction bands and valence bands of host materials.

引用

页数：6

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