A study of the structural properties of GaN implanted by various rare-earth ions

被引：17
|
作者：
Mackova, A. [1 ,2 ]
Malinsky, P. [1 ,2 ]
Sofer, Z. [3 ]
Simek, P. [3 ]
Sedmidubsky, D. [3 ]
Mikulics, M. [4 ,5 ]
Wilhelm, R. A. [6 ,7 ]
机构：
[1] Acad Sci Czech Republic, Inst Nucl Phys, Vvi, CZ-25068 Rez, Czech Republic
[2] Univ JE Purkyne, Fac Sci, Dept Phys, Usti Nad Labem 40096, Czech Republic
[3] Inst Chem Technol, Dept Inorgan Chem, CR-16628 Prague, Czech Republic
[4] Forschungszentrum Julich, Peter Grunberg Inst PGI 9, D-52425 Julich, Germany
[5] Julich Aachen Res Alliance, Fundamentals Future Informat Technol, D-52425 Julich, Germany
[6] Helmholtz Zentrum Dresden Rossendorf, Inst Ion Beam Phys & Mat Res, D-01314 Dresden, Germany
[7] Tech Univ Dresden, D-01062 Dresden, Germany
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 2013年 / 307卷
关键词：
Rare earth implantation; GaN; Depth profiles; RBS; Raman spectroscopy; AFM; RAMAN-SCATTERING;
D O I：
10.1016/j.nimb.2012.11.079
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
GaN layers with < 0001 > crystallographic orientation, grown by low-pressure metal-organic vapour-phase epitaxy (MOVPE) on c-plane sapphire substrates, were implanted with 200 and 400 keV Sm+, Tm+, Eu+, Tb+ and Ho+ ions at fluencies of 1 x 10(15)-1 x 10(16) cm(-2). The composition of the ion-implanted layers and concentration profiles of the implanted atoms were studied by Rutherford Back-Scattering spectrometry (RBS). The profiles were compared to SRIM 2008 simulations. The structural properties of the ion-implanted layers were characterised by RBS-channelling and Raman spectroscopy. Changes in the surface morphology caused by the ion implantation were examined by Atomic Force Microscopy (AFM). A structural analysis showed a high disorder of the atoms close to the amorphised structure at the surface layer above an implantation fluence of 5 x 10(15) cm(-2) while lower disorder density was observed in the bulk according to the projected range of 400 keV ions. The post-implantation annealing induced significant changes only in the Sm and Eu depth profiles; a diffusion of rare-earths implanted at a fluence of 5 x 10(15) cm(-2) to the surface was observed. The annealing caused the reconstruction of the surface layer accompanied by surface-roughness enhancement. (C) 2013 Elsevier B.V. All rights reserved.
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收藏
页码：446 / 451
页数：6
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