On the origin of the excess low-frequenoy noise in graded-channel silicon-on-insulator nMOSFETs

被引：4
|
作者：
Simoen, Eddy [1 ]
Claeys, C.
Chung, T. M.
Flandre, D.
Raskin, J.-P.
机构：
[1] IMEC, B-3001 Louvain, Belgium
[2] Katholieke Univ Leuven, Dept Elect Engn, B-3001 Louvain, Belgium
[3] Catholic Univ Louvain, Microwave Lab, B-1348 Louvain, Belgium
[4] Catholic Univ Louvain, Microelect Lab, B-1348 Louvain, Belgium
来源：
IEEE ELECTRON DEVICE LETTERS | 2007年 / 28卷 / 10期
关键词：
fully depleted (FD) silicon-on-insulator (SOI); graded-channel (GC) transistors; low-frequency (LF) noise;
D O I：
10.1109/LED.2007.905958
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The origin of the low-frequency noise in graded-channel silicon-on-insulator nMOSFET is studied as a function of the back-gate bias at a low drain-to-source bias. It is shown that an excess noise peak that is correlated with the peak in the transconductance can be observed. This excess noise is due to a generation-recombination component in the low-frequency range, which is suppressed when the back gate is in accumulation mode.
引用
收藏
页码：919 / 921
页数：3
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