Silicon-film-related random telegraph noise in UTBOX silicon-on-insulator nMOSFETs

被引：2

作者：

Fang Wen ^{[1
,2
,3
]}

Simoen, Eddy ^{[1
]}

Li Chikang ^{[4
,5
]}

Aoulaiche, Marc ^{[6
]}

Luo Jun ^{[3
]}

Zhao Chao ^{[3
]}

Claeys, Cor ^{[1
,2
]}

机构：

[1] IMEC, Kapeldreef 75, B-3000 Leuven, Belgium

[2] Katholieke Univ Leuven, EE Dept, B-3000 Leuven, Belgium

[3] Chinese Acad Sci, Key Lab Microelect Devices & Integrated Technol, Inst Microelect, Beijing 100029, Peoples R China

[4] Natl Taiwan Univ, Grad Inst Photon & Optoelect, Taipei 10617, Taiwan

[5] Natl Taiwan Univ, Dept Elect Engn, Taipei 10617, Taiwan

[6] Micron Technol Belgium, B-3001 Leuven, Belgium

来源：

JOURNAL OF SEMICONDUCTORS | 2015年 / 36卷 / 09期

关键词：

random telegraph noise; low frequency noise; ultra-thin BOX; silicon-on-insulator; single charge trap;

D O I：

10.1088/1674-4926/36/9/094005

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

This paper studies the amplitude of random telegraph noise (RTN) caused by a single trap in the silicon film of ultra-thin buried oxide (UTBOX) silicon-on-insulator (SOI) devices. The film-defect-related RTN was identified and analyzed by low frequency noise measurement and time domain measurement. Emphasis is on the relative amplitude Delta I-D / ID, which is studied in the function of the front-gate, the back-gate and the drain-to-source biases. Interesting asymmetric or symmetric VDS dependence of switched source and drain are observed and supported by calibrated Sentaurus simulations. It is believed the asymmetry of the VDS dependence of the switched source and drain is related to the lateral trap position along the source and drain.

引用

页数：5

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