Efficient lateral confinement by an oxide aperture in a mid-infrared GaSb-based vertical light-emitting source

被引：7
|
作者：
Laaroussi, Y. [1 ]
Almuneau, G. [1 ]
Sanchez, D. [2 ]
Cerutti, L. [2 ]
机构：
[1] Univ Toulouse, LAAS, CNRS, UPS,INSA,INP,ISAE, F-31077 Toulouse, France
[2] Univ Montpellier 2, CNRS, UMR 5214, Inst Elect Sud, F-34095 Montpellier 5, France
来源：
JOURNAL OF PHYSICS D-APPLIED PHYSICS | 2011年 / 44卷 / 14期
关键词：
MU-M; TUNNEL-JUNCTION;
D O I：
10.1088/0022-3727/44/14/142001
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The use of lateral oxidation for electrical and optical confinement on a GaSb-based mid-infrared vertical light-emitting diode is demonstrated in this paper. The metamorphic growth of (Al)GaAs above a tunnel junction grown on the GaSb-based resonant-cavity light-emitting diode enables good structural quality of the As-based layers and oxidation of the AlAs embedded film. Oxide-confined devices with emission wavelength around 2.6 mu m are demonstrated, with no noticeable degradation from the oxidation thermal treatment. Such an efficient oxide confinement scheme can be applied for the realization of high-performance mid-infrared vertical-cavity lasers.
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页数：4
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