Growth and Characterization of GaSb-Based Type-II InAs/GaSb Superlattice Photodiodes for Mid-Infrared Detection

被引：17
|
作者：
Wang Guo-Wei [1 ]
Xu Ying-Qiang [1 ]
Guo Jie [2 ]
Tang Bao [1 ]
Ren Zheng-Wei [1 ]
He Zhen-Hong [1 ]
Niu Zhi-Chuan [1 ]
机构：
[1] Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China
[2] Luoyang Optielect Dev Ctr, Luoyang 471009, Peoples R China
来源：
CHINESE PHYSICS LETTERS | 2010年 / 27卷 / 07期
基金：
中国国家自然科学基金;
关键词：
IR DETECTION MODULES; INAS;
D O I：
10.1088/0256-307X/27/7/077305
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
InAs/GaSb superlattice (SL) midwave infrared photovoltaic detectors are grown by molecular beam epitaxy on GaSb(001) residual p-type substrates. A thick GaSb layer is grown under the optimized growth condition as a buffer layer. The detectors containing a 320-period 8ML/8ML InAs/GaSb SL active layer are fabricated with a series pixel area using anode sulfide passivation. Corresponding to 50% cutoff wavelengths of 5.0 mu m at 77 K, the peak directivity of the detectors is 1.6 x 10(10) cm.Hz(1/2) W-1 at 77 K.
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页数：4
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