Assortment of technological terms for silicon-germanium thin films in gradient configuration

被引：2

作者：

Kolodziej, A. ^{[1
]}

Krewniak, P. ^{[1
]}

Baranowski, W. ^{[1
]}

Wronski, C. R. ^{[2
]}

机构：

[1] AGH Univ Sci & Technol, Dept Elect, PL-30059 Krakow, Poland

[2] Penn State Univ, Dept Elect Engn, University Pk, PA 16802 USA

来源：

VACUUM | 2008年 / 82卷 / 10期

关键词：

amorphous silicon; silicon-germanium alloy; PECVD process; UV vis IR measurements; triple-junction silicon-based solarcells; phase diagram;

D O I：

10.1016/j.vacuum.2008.01.031

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Phase diagrams have been studied to describe the RF PECVD process for intrinsic-hydrogenated silicon Si:H and silicon-low germanium alloy a-Si1-xGex:H thin films using textured Al substrates that have been overdeposited with n-type amorphous SM (n(+) a-Si:H). UV, vis, IR, atomic force microscopy (AFM), Raman spectroscopy, small angle X-ray and cross-section transmission electron microscopy (TEM) are used to establish the phase diagram. The a-Si:H, a-Si1-xGex, and mu c-Si:H processes are applied for optimization of triple-junction thin silicon-based n-i-p solar cells. (c) 2008 Elsevier Ltd. All rights reserved.

引用

页码：1137 / 1140

页数：4

共 50 条

[1] Ion beam mixing of silicon-germanium thin films
Sufian Abedrabbo
D. -E. Arafah
S. Salem
Journal of Electronic Materials, 2005, 34 : 468 - 473
[2] Ion beam mixing of silicon-germanium thin films
Abedrabbo, S
Arafah, DE
Salem, S
JOURNAL OF ELECTRONIC MATERIALS, 2005, 34 (05) : 468 - 473
[3] Nickel silicides grown on amorphous silicon and silicon-germanium thin films
Sarcona, G
Saha, SK
Hatalis, MK
ELECTROCHEMICAL AND SOLID STATE LETTERS, 1998, 1 (05) : 233 - 234
[4] SILICON-GERMANIUM FILMS FOR PHOTOMASKING APPLICATIONS
LIU, CW
CAIRNS, JA
GIBSON, RAG
HOURD, AC
LAWRENSON, B
LEECE, CF
JOURNAL OF MATERIALS CHEMISTRY, 1994, 4 (03) : 393 - 397
[5] Aluminum-induced crystallization of amorphous silicon-germanium thin films
Gjukic, M
Buschbeck, M
Lechner, R
Stutzmann, M
APPLIED PHYSICS LETTERS, 2004, 85 (11) : 2134 - 2136
[6] Co-deposition of cobalt disilicide on silicon-germanium thin films
Goeller, PT
Boyanov, BI
Sayers, DE
Nemanich, RJ
THIN SOLID FILMS, 1998, 320 (02) : 206 - 210
[7] Study on the RF Sputtered hydrogenated amorphous silicon-germanium thin films
Serényi, M
Betko, J
Nemesics, A
Khanh, NQ
Basa, DK
Morvic, M
MICROELECTRONICS RELIABILITY, 2005, 45 (7-8) : 1252 - 1256
[8] The Effect of Plasma Power on the Properties of Amorphous Silicon-Germanium Thin Films
Gu, Long
Yang, Huidong
Huang, Bo
EQUIPMENT MANUFACTURING TECHNOLOGY AND AUTOMATION, PTS 1-3, 2011, 317-319 : 341 - 344
[9] Aluminum-induced crystallization of polycrystalline silicon-germanium thin films
Lin, Jian-Yang
Chang, Pai-Yu
International Journal of Electrical Engineering, 2010, 17 (06): : 367 - 372
[10] Formation of crystalline silicon-germanium thin films on silicon substrates by solid phase crystallization
Hamdoh, Alaa
Kaneko, Tetsuya
Isomura, Masao
THIN SOLID FILMS, 2018, 645 : 203 - 208

← 1 2 3 4 5 →