Assortment of technological terms for silicon-germanium thin films in gradient configuration

被引：2

作者：

Kolodziej, A. ^{[1
]}

Krewniak, P. ^{[1
]}

Baranowski, W. ^{[1
]}

Wronski, C. R. ^{[2
]}

机构：

[1] AGH Univ Sci & Technol, Dept Elect, PL-30059 Krakow, Poland

[2] Penn State Univ, Dept Elect Engn, University Pk, PA 16802 USA

来源：

VACUUM | 2008年 / 82卷 / 10期

关键词：

amorphous silicon; silicon-germanium alloy; PECVD process; UV vis IR measurements; triple-junction silicon-based solarcells; phase diagram;

D O I：

10.1016/j.vacuum.2008.01.031

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Phase diagrams have been studied to describe the RF PECVD process for intrinsic-hydrogenated silicon Si:H and silicon-low germanium alloy a-Si1-xGex:H thin films using textured Al substrates that have been overdeposited with n-type amorphous SM (n(+) a-Si:H). UV, vis, IR, atomic force microscopy (AFM), Raman spectroscopy, small angle X-ray and cross-section transmission electron microscopy (TEM) are used to establish the phase diagram. The a-Si:H, a-Si1-xGex, and mu c-Si:H processes are applied for optimization of triple-junction thin silicon-based n-i-p solar cells. (c) 2008 Elsevier Ltd. All rights reserved.

引用

页码：1137 / 1140

页数：4

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