Defects in bulk GaN and homoepitaxial layers

被引：0
|
作者：
Liliental-Weber, Z [1 ]
机构：
[1] Univ Calif Berkeley, Lawrence Berkeley Lab, Div Mat Sci, Ctr Adv Mat, Berkeley, CA 94720 USA
来源：
GALLIUM NITRIDE (GAN) II | 1999年 / 57卷
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：129 / 156
页数：28
相关论文
共 50 条
  • [21] Luminescence and reflectivity in the exciton region of homoepitaxial GaN layers grown on GaN substrates
    Pakula, K
    Wysmolek, A
    Korona, KP
    Baranowski, JM
    Stepniewski, R
    Grzegory, I
    Bockowski, M
    Jun, J
    Krukowski, S
    Wroblewski, M
    Porowski, S
    SOLID STATE COMMUNICATIONS, 1996, 97 (11) : 919 - 922
  • [22] Lattice parameters of GaN single crystals, homoepitaxial layers and heteroepitaxial layers on sapphire
    Leszczynski, M
    Prystawko, P
    Suski, T
    Lucznik, B
    Domagala, J
    Bak-Misiuk, J
    Stonert, A
    Turos, A
    Langer, R
    Barski, A
    JOURNAL OF ALLOYS AND COMPOUNDS, 1999, 286 (1-2) : 271 - 275
  • [23] GaN homoepitaxial layers grown by metalorganic chemical vapor deposition
    Leszczynski, M
    Beaumont, B
    Frayssinet, E
    Knap, W
    Prystawko, P
    Suski, T
    Grzegory, I
    Porowski, S
    APPLIED PHYSICS LETTERS, 1999, 75 (09) : 1276 - 1278
  • [24] Growth and properties of single crystalline GaN substrates and homoepitaxial layers
    Porowski, S
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1997, 44 (1-3): : 407 - 413
  • [25] Photoluminescence dynamics in the near bandgap region of homoepitaxial GaN layers
    Warsaw Univ, Warszawa, Poland
    Materials Science Forum, 1997, 258-263 (pt 2): : 1125 - 1130
  • [26] Growth of GaN single crystals and properties of homoepitaxial MOCVD layers
    Baranowski, JM
    Porowski, S
    SEMICONDUCTING AND INSULATING MATERIALS, 1996: PROCEEDINGS OF THE 9TH CONFERENCE ON SEMICONDUCTING AND INSULATING MATERIALS (SIMC'96), 1996, : 77 - 84
  • [27] Growth and properties of single crystalline GaN substrates and homoepitaxial layers
    Polish Acad of Sciences, Warsaw, Poland
    Mater Sci Eng B Solid State Adv Technol, 1-3 (407-413):
  • [28] Physical properties of GaN single crystalline substrates and homoepitaxial layers
    Porowski, S
    Baranowski, JM
    Leszczynski, M
    Jun, J
    Bockowski, M
    Grzegory, I
    Krukowski, S
    Wroblewski, M
    Lucznik, B
    Nowak, G
    Pakula, K
    Wysmolek, A
    Korona, KP
    Stepniewski, R
    BLUE LASER AND LIGHT EMITTING DIODES, 1996, : 38 - 41
  • [29] Photoluminescence dynamics in the near bandgap region of homoepitaxial GaN layers
    Korona, KP
    Bergman, JP
    Monemar, B
    Baranowski, JM
    Pakula, K
    Grzegory, I
    Porowski, S
    DEFECTS IN SEMICONDUCTORS - ICDS-19, PTS 1-3, 1997, 258-2 : 1125 - 1130
  • [30] Analysis of threshold voltage in GaN MOSFETs on homoepitaxial p-type GaN layers
    Kikuta, Daigo
    Ito, Kenji
    Narita, Tetsuo
    Kachi, Tetsu
    2019 COMPOUND SEMICONDUCTOR WEEK (CSW), 2019,
12345