Luminescence and reflectivity in the exciton region of homoepitaxial GaN layers grown on GaN substrates

被引：126

作者：

Pakula, K ^{[1
]}

Wysmolek, A ^{[1
]}

Korona, KP ^{[1
]}

Baranowski, JM ^{[1
]}

Stepniewski, R ^{[1
]}

Grzegory, I ^{[1
]}

Bockowski, M ^{[1
]}

Jun, J ^{[1
]}

Krukowski, S ^{[1
]}

Wroblewski, M ^{[1
]}

Porowski, S ^{[1
]}

机构：

[1] POLISH ACAD SCI,HIGH PRESSURE RES CTR,PL-01142 WARSAW,POLAND

来源：

SOLID STATE COMMUNICATIONS | 1996年 / 97卷 / 11期

关键词：

gallium nitride; optical properties; luminescence; reflectance;

D O I：

10.1016/0038-1098(95)00816-0

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

In this work we report results of photoluminescence (PL) and reflectivity measurements in the exciton region of GaN homoepitaxial layers grown by metalorganic chemical vapour deposition on GaN substrates. At low temperature (4.2K), very narrow (FWHM = 1.OmeV) PL lines related to excitons bound to neutral acceptor (3.4666eV) and neutral donor (3.4719eV) were observed. The energies of free excitons from reflectivity and PL measurements were found to be: E(A) = 3.4780eV, E(B) = 3.4835eV and E(C) = 3.502eV.

引用

页码：919 / 922

页数：4

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