Silicon-Silicon Anodic Bonding Process with Embedded Glass

被引：0

作者：

Cui, W. P. ^{[1
,2
]}

Liu, G. D. ^{[2
]}

Zhang, F. S. ^{[2
]}

Hu, H. ^{[2
]}

Gao, C. C. ^{[2
,3
]}

Hao, Y. L. ^{[2
,3
,4
]}

机构：

[1] Peking Univ, Shenzhen Grad Sch, Shenzhen 518055, Guangdong, Peoples R China

[2] Peking Univ, Natl Key Lab Sci & Technol Micro Nano Fabricat, Beijing 100871, Peoples R China

[3] Chinese Acad Sci, State Key Lab Transducer Technol, Shanghai 200050, Peoples R China

[4] Innovat Ctr MicroNanoelect & Integrated Syst, Beijing 100871, Peoples R China

来源：

2015 IEEE 10TH INTERNATIONAL CONFERENCE ON NANO/MICRO ENGINEERED AND MOLECULAR SYSTEMS (NEMS) | 2015年

关键词：

silicon; anodic bonding; glass; embedded; OXIDE;

D O I：

暂无

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

This paper reports a silicon-silicon anodic bonding process based on embedded glass. We successfully embedded glass into patterned silicon groove by fusion treatment and bonded it with another silicon wafer by anodic bonding process. This process realizes the precise control of bonding pattern and the depth of the bonding gap without electrical connection between two silicon wafers. Tension test result shows that the bonding strength is over 7MPa-which is in accordance with normal anodic bonding process, so that the process can be used in a wide range of MEMS devices design.

引用

页码：470 / 475

页数：6

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