Optimization of metamorphic InGaAs quantum wells on GaAs grown by molecular beam epitaxy

被引：0

作者：

Wu Bing-Peng ^{[1
]}

Wu Dong-Hai ^{[1
]}

Ni Hai-Qiao ^{[1
]}

Huang She-Song ^{[1
]}

Zhan Feng ^{[1
]}

Xiong Yong-Hua ^{[1
]}

Xu Ying-Qiang ^{[1
]}

Niu Zhi-Chuan ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Semicond, State Key Lab Superlattice & Microstruct, Beijing 100083, Peoples R China

来源：

CHINESE PHYSICS LETTERS | 2007年 / 24卷 / 12期

关键词：

D O I：

10.1088/0256-307X/24/12/069

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We investigate the molecular beam epitaxy growth of metamorphic InxGa(1-x)As materials (x up to 0.5) on GaAs substrates systematically. Optimization of structure design and growth parameters is aimed at obtaining smooth surface and high optical quality. The optimized structures have an average surface roughness of 0.9-1.8 nm. It is also proven by PL measurements that the optical properties of high indium content (55%) InGaAs quantum wells are improved apparently by defect reduction technique and by introducing Sb as a surfactant. These provide us new ways for growing device quality metamorphic structures on GaAs substrates with long-wavelength emissions.

引用

页码：3543 / 3546

页数：4

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