Optical and structural properties of metamorphic InGaAs/AlAsSb quantum wells grown on GaAs substrates

被引：0
|
作者：
Gozu, Shin-ichiro [1 ]
Ueta, Akio [1 ]
Yamamoto, Naokatsu [1 ]
Akahane, Kouichi [1 ]
Ohtani, Naoki [2 ]
Tsuchiya, Masahiro [1 ]
机构：
[1] Natl Inst Informat & Commun Technol, Basic & Adv Res Div, 4-2-1,Nukui Kitamachi, Koganei, Tokyo 1848795, Japan
[2] Doshisha Univ, Kyoto 6100321, Japan
来源：
2006 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS CONFERENCE PROCEEDINGS | 2006年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Metamorphic InGaAs/AlAsSb multiple quantum wells (M-MQWs) were grown on GaAs. The M-MQWs were evaluated by X-ray diffraction, photoluminescence and polarity dependent optical absorption measurements. These measurements revealed that M-MQWs had good structural and optical qualities. M-MQWs with high sheet carrier densities (>= 10(12)/cm(2)) clearly showed absorptions in TM polarized light corresponding to intersubband transitions (ISBTs). Therefore, the M-MQWs can be applied to ultra fast optical modulators using the ISBTs.
引用
收藏
页码：298 / +
页数：2
相关论文
共 50 条
  • [1] Metamorphic InGaAs/AlAsSb quantum wells grown on GaAs substrates for intersubband devices operating toward short-wavelength region
    Gozu, S
    Ueta, A
    Yamamoto, N
    Akahane, K
    Ohtani, N
    Tsuchiya, M
    [J]. ELECTRONICS LETTERS, 2006, 42 (10) : 600 - 601
  • [2] Optical and structural characterization of InGaAs/AlAsSb quantum wells grown by molecular beam epitaxy
    Mozume, T
    Georgiev, N
    [J]. 2001 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS, CONFERENCE PROCEEDINGS, 2001, : 59 - 62
  • [3] Optical and structural characterization of InGaAs/AlAsSb quantum wells grown by molecular beam epitaxy
    Mozume, Teruo
    Georgiev, Nikolai
    [J]. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 2002, 41 (2 B): : 1008 - 1011
  • [4] Optical and structural characterization of InGaAs/AlAsSb quantum wells grown by molecular beam epitaxy
    Mozume, T
    Georgiev, N
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2002, 41 (2B): : 1008 - 1011
  • [5] AlGaAs/GaAs and InGaAs/GaAs quantum wells grown on GaAs (111)A substrates
    Watanabe, T
    Yamamoto, T
    Vaccaro, PO
    Ohnishi, H
    Fujita, K
    [J]. MICROELECTRONICS JOURNAL, 1996, 27 (4-5) : 411 - 421
  • [6] Optimization of metamorphic InGaAs quantum wells on GaAs grown by molecular beam epitaxy
    Wu Bing-Peng
    Wu Dong-Hai
    Ni Hai-Qiao
    Huang She-Song
    Zhan Feng
    Xiong Yong-Hua
    Xu Ying-Qiang
    Niu Zhi-Chuan
    [J]. CHINESE PHYSICS LETTERS, 2007, 24 (12) : 3543 - 3546
  • [7] Optical and structural characterization of single quantum wells of InGaAs on GaAs MOCVD grown both on exactly oriented and misoriented substrates
    DiPaola, A
    Ritchie, DM
    Riva, M
    Vidimari, F
    Frigeri, C
    Brinciotti, A
    [J]. ADVANCES IN CRYSTAL GROWTH, 1996, 203 : 249 - 253
  • [8] InGaAs/GaAs Quantum Wells Grown by MBE on Artificial GaAs/Si(001) Substrates
    Emel'yanov, E. A.
    Kokhanenko, A. P.
    Abramkin, D. S.
    Pchelyakov, O. P.
    Putyato, M. A.
    Semyagin, B. R.
    Preobrazhenskii, V. V.
    Vasilenko, A. P.
    Feklin, D. F.
    Niu, Zhicuan
    Ni, Haiqiao
    [J]. RUSSIAN PHYSICS JOURNAL, 2014, 57 (03) : 359 - 363
  • [9] InGaAs/GaAs Quantum Wells Grown by MBE on Artificial GaAs/Si(001) Substrates
    Е. А. Emel’yanov
    А. P. Kokhanenko
    D. S. Abramkin
    O. P. Pchelyakov
    М. А. Putyato
    B. R. Semyagin
    V. V. Preobrazhenskii
    A. P. Vasilenko
    D. F. Feklin
    Zhicuan Niu
    Haiqiao Ni
    [J]. Russian Physics Journal, 2014, 57 : 359 - 363
  • [10] Carrier diffusion in InGaAs/GaAs quantum wells grown on vicinal GaAs(001) substrates
    Monte, AFG
    Soler, MAG
    da Silva, SW
    Rodrigues, BBD
    Morais, PC
    Quivy, AA
    Leite, JR
    [J]. PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2004, 23 (3-4): : 466 - 470
12345