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Optical and structural properties of metamorphic InGaAs/AlAsSb quantum wells grown on GaAs substrates

被引：0
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作者：
Gozu, Shin-ichiro [1 ]
Ueta, Akio [1 ]
Yamamoto, Naokatsu [1 ]
Akahane, Kouichi [1 ]
Ohtani, Naoki [2 ]
Tsuchiya, Masahiro [1 ]
机构：
[1] Natl Inst Informat & Commun Technol, Basic & Adv Res Div, 4-2-1,Nukui Kitamachi, Koganei, Tokyo 1848795, Japan
[2] Doshisha Univ, Kyoto 6100321, Japan
来源：
2006 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS CONFERENCE PROCEEDINGS | 2006年
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D O I：
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Metamorphic InGaAs/AlAsSb multiple quantum wells (M-MQWs) were grown on GaAs. The M-MQWs were evaluated by X-ray diffraction, photoluminescence and polarity dependent optical absorption measurements. These measurements revealed that M-MQWs had good structural and optical qualities. M-MQWs with high sheet carrier densities (>= 10(12)/cm(2)) clearly showed absorptions in TM polarized light corresponding to intersubband transitions (ISBTs). Therefore, the M-MQWs can be applied to ultra fast optical modulators using the ISBTs.
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页码：298 / +
页数：2
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