Formation of self-organization InAs quantum dots on (001) InP substrate by As/P exchange reaction in MOCVD

被引：0
|
作者：
Wang, BZ [1 ]
Zhao, FH [1 ]
Peng, YH [1 ]
Jin, Z [1 ]
Li, YD [1 ]
Yang, SR [1 ]
Liu, SY [1 ]
机构：
[1] Jilin Univ, Dept Elect Engn, State Key Lab Integrated Optoelect, Changchun 130023, Peoples R China
来源：
CHEMICAL RESEARCH IN CHINESE UNIVERSITIES | 1998年 / 14卷 / 02期
关键词：
self-organized quantum dots; anion exchange reaction; photoluminescence; low pressure MOCVD;
D O I：
暂无
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
引用
收藏
页码：221 / 224
页数：4
相关论文
共 50 条
  • [31] Directed self-organization of quantum dots
    Aqua, Jean-Noel
    Xu, Xianbin
    PHYSICAL REVIEW E, 2014, 90 (03):
  • [32] Shape change of InAs self-assembled quantum dots induced by As/P exchange reaction
    Yoon, S
    Moon, Y
    Lee, TW
    Hwang, H
    Yoon, E
    Kim, YD
    THIN SOLID FILMS, 1999, 357 (01) : 81 - 84
  • [33] In situ measurements of As/P exchange during InAs/InP(001) quantum wires growth
    González, MU
    García, JM
    González, L
    Silveira, JP
    González, Y
    Gómez, JD
    Briones, F
    APPLIED SURFACE SCIENCE, 2002, 188 (1-2) : 188 - 192
  • [34] Optical properties of self-assembled InAs quantum dots grown on InAlAs/InP(001)
    Salem, B
    Benyattou, T
    Guillot, G
    Bremond, G
    Brault, J
    Gendry, M
    QUANTUM CONFINED SEMICONDUCTOR NANOSTRUCTURES, 2003, 737 : 77 - 84
  • [35] Self-organization of InAs and As quantum dots in GaAs by a combined molecular beam epitaxy process
    Chaldyshev, V. V.
    Bert, N. A.
    Nevedomsky, V. N.
    Preobrazhenskii, V. V.
    Putyato, M. A.
    Semyagin, B. R.
    PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 6, NO 12, 2009, 6 (12): : 2698 - +
  • [36] Theory of shape evolution of InAs quantum dots on In0.5Ga0.5As/InP(001) substrate
    Kratzer, Peter
    Chakrabarti, Aparna
    Liu, Quincy K. K.
    Scheffler, Matthias
    NEW JOURNAL OF PHYSICS, 2009, 11
  • [37] Self-organization of wire-like InAs nanostructures on InP
    Li, HX
    Zhuang, QD
    Kong, XW
    Wang, ZG
    Daniels-Race, T
    JOURNAL OF CRYSTAL GROWTH, 1999, 205 (04) : 613 - 617
  • [38] Initial stage of the overgrowth of InP on InAs/InP(001) quantum dots: Formation of InP terraces driven by preferential nucleation on quantum dot edges
    Saint-Girons, G.
    Patriarche, G.
    Michon, A.
    Beaudoin, G.
    Sagnes, I.
    Smaali, K.
    Troyon, M.
    APPLIED PHYSICS LETTERS, 2006, 89 (03)
  • [39] Site control of InAs quantum dots on a patterned InP surface: As/P exchange reactions
    Borgstrom, M
    Bryllert, T
    Sass, T
    Wernersson, LE
    Samuelson, L
    Seifert, W
    JOURNAL OF CRYSTAL GROWTH, 2003, 248 : 310 - 316
  • [40] Initial stages of self-assembled InAs/InP(001) quantum wire formation
    Fuster, David
    Alen, Benito
    Gonzalez, Luisa
    Gonzalez, Yolanda
    Martinez-Pastor, Juan
    JOURNAL OF CRYSTAL GROWTH, 2007, 301 : 705 - 708
12345