Formation of self-organization InAs quantum dots on (001) InP substrate by As/P exchange reaction in MOCVD

被引:0
|
作者
Wang, BZ [1 ]
Zhao, FH [1 ]
Peng, YH [1 ]
Jin, Z [1 ]
Li, YD [1 ]
Yang, SR [1 ]
Liu, SY [1 ]
机构
[1] Jilin Univ, Dept Elect Engn, State Key Lab Integrated Optoelect, Changchun 130023, Peoples R China
关键词
self-organized quantum dots; anion exchange reaction; photoluminescence; low pressure MOCVD;
D O I
暂无
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
引用
收藏
页码:221 / 224
页数:4
相关论文
共 50 条
  • [21] Effects of the matrix on self-organization of InAs quantum nanostructures grown on InP substrates
    Li, NX
    Daniels-Race, T
    Hasan, MA
    APPLIED PHYSICS LETTERS, 2002, 80 (08) : 1367 - 1369
  • [22] InAs(P) island formation by As/P exchange reaction on InP surfaces
    Anand, S
    Carlström, CF
    Patel, A
    Niemi, E
    Stålnacke, B
    Landgren, G
    PROCEEDING OF THE TENTH INTERNATIONAL WORKSHOP ON THE PHYSICS OF SEMICONDUCTOR DEVICES, VOLS I AND II, 2000, 3975 : 1033 - 1036
  • [23] Effect of growth interruption on photoluminescence of self-assembled InAs quantum dot structures grown on (001) InP substrate by MOCVD
    Wang, BZ
    Chua, SJ
    Wang, ZJ
    Liu, SY
    PHYSICA E, 2000, 8 (03): : 290 - 295
  • [24] Size control of InAs/InP(001) quantum wires by tailoring P/As exchange
    Fuster, D
    González, MU
    González, L
    González, Y
    Ben, T
    Ponce, A
    Molina, SI
    Martínez-Pastor, J
    APPLIED PHYSICS LETTERS, 2004, 85 (08) : 1424 - 1426
  • [25] Effect of matrix on InAs self-organized quantum dots on InP substrate
    Ustinov, VM
    Weber, ER
    Ruvimov, S
    Liliental-Weber, Z
    Zhukov, AE
    Egorov, AY
    Kovsh, AR
    Tsatsul'nikov, AF
    Kop'ev, PS
    APPLIED PHYSICS LETTERS, 1998, 72 (03) : 362 - 364
  • [26] Surface effects on shape, self-organization and photoluminescence of InAs islands grown on InAlAs/InP(001)
    Brault, J
    Gendry, M
    Grenet, G
    Hollinger, G
    Olivares, J
    Salem, B
    Benyattou, T
    Bremond, G
    JOURNAL OF APPLIED PHYSICS, 2002, 92 (01) : 506 - 510
  • [27] Multi-exciton complexes in single InAs quantum dots grown on InP(001) substrate
    Chauvin, N
    Tranvouez, E
    Bremond, G
    Guillot, G
    Bru-Chevallier, C
    Dupay, E
    Regreny, P
    Gendry, M
    2005 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS, 2005, : 273 - 275
  • [28] Effect of the substrate orientation on the self-organization of (InGa)As/GaAs quantum dots
    Henini, M.
    Polimeni, A.
    Patanè, A.
    Eaves, L.
    Main, P.C.
    Hill, G.
    Microelectronics Journal, 30 (04): : 319 - 322
  • [29] InAs/InP(001) quantum dots and quantum sticks grown by MOVPE: shape, anistropy and formation process
    Michon, A.
    Patriarche, G.
    Segnes, I.
    Beaudoin, G.
    Saint-Girons, G.
    PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 3, NO 11, 2006, 3 (11): : 3928 - +
  • [30] InAs/InP(001) quantum dots and quantum sticks grown by MOVPE: Shape, anisotropy and formation process
    Saint-Girons, G.
    Michon, A.
    Sagnes, I.
    Beaudoin, G.
    Patriarche, G.
    PHYSICS OF SEMICONDUCTORS, PTS A AND B, 2007, 893 : 71 - +