Low On-Resistance 1.2 kV 4H-SiC MOSFETs Integrated with Current Sensor

被引：0
|
作者：
Furukawa, A. [1 ]
Kinouchi, S. [1 ]
Nakatake, H. [1 ]
Ebiike, Y. [1 ]
Kagawa, Y. [1 ]
Miura, N. [1 ]
Nakao, Y. [1 ]
Imaizumi, M. [1 ]
Sumitani, H. [1 ]
Oomori, T. [2 ]
机构：
[1] Mitsubishi Electr Corp, Adv Technol R&D Ctr, 8-1-1 Tsukaguchi Honmachi, Amagasaki, Hyogo 6618661, Japan
[2] Mitsubishi Electr Corp, Power Device Works, Amagasaki, Hyogo, Japan
来源：
2011 IEEE 23RD INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD) | 2011年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
4H-SiC MOSFETs integrated with a current sensor have been fabricated for the first time. The MOSFET shows superior characteristics with a specific on-resistance of 3.7 m Omega cm(2) and a blocking voltage of 1.4 kV. The deviation of the current ratio (Imain/Isense) stays within 10% in the temperature range between 25 degrees C and 175 degrees C, which is desirable for the current sensor of high power devices. Furthermore, the main current shut-off operation at an over-current detected using the current sensor has been demonstrated successfully.
引用
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页码：288 / 291
页数：4
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