Modeling-based design optimization of wafer-level and chip-scale packaging for RF-MEMS devices

被引:0
|
作者
Kelley, M [1 ]
Malshe, AP [1 ]
Barlow, F [1 ]
机构
[1] Univ Arkansas, Fayetteville, AR 72701 USA
来源
55TH ELECTRONIC COMPONENTS & TECHNOLOGY CONFERENCE, VOLS 1 AND 2, 2005 PROCEEDINGS | 2005年
关键词
RF MEMS; packaging; modeling and simulation; wafer level; chip scale;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A wafer-level chip-scale package for RF-MEMS devices - specifically RF-MEMS switches - has been developed that meets the criteria needed for encapsulation of these devices. The RF-MEMS devices within the package are of a coplanar waveguide (CPW) configuration and were designed for operation from 1 to 10 GHz. High resistivity silicon (HRS) and low temperature co-fired ceramic (LTCC) were chosen due to their ease of processing, mechanical properties, and electrical performance. Representative models of capping substrates for the RF-MEMS switches were developed to simulate and optimize the designs using Microwave Office from Applied Wave Research. Data were obtained from the models in the form of scattering or S-parameters. The results show that for substrates with thicknesses below 300 mu m, the electrical performance is acceptable for the use of HRS and LTCC as capping-substrate materials.
引用
收藏
页码:1814 / 1818
页数:5
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