Toward atom probe tomography of microelectronic devices

被引：29

作者：

Larson, D. J. ^{[1
]}

Lawrence, D. ^{[1
]}

Lefebvre, W. ^{[2
]}

Olson, D. ^{[1
]}

Prosa, T. J. ^{[1
]}

Reinhard, D. A. ^{[1
]}

Ulfig, R. M. ^{[1
]}

Clifton, P. H. ^{[1
]}

Bunton, J. H. ^{[1
]}

Lenz, D. ^{[1
]}

Olson, J. D. ^{[1
]}

Renaud, L. ^{[3
]}

Martin, I. ^{[3
]}

Kelly, T. F. ^{[1
]}

机构：

[1] Cameca Instruments Inc, 5500 Nobel Dr, Madison, WI 53711 USA

[2] Univ Rouen, Saint Etienne Rouvray, F-76821 Mont St Aignan, France

[3] Cameca SAS, F-92622 Gennevilliers, France

来源：

17TH INTERNATIONAL CONFERENCE ON MICROSCOPY OF SEMICONDUCTING MATERIALS 2011 | 2011年 / 326卷

关键词：

SPECIMEN PREPARATION;

D O I：

10.1088/1742-6596/326/1/012030

中图分类号：

TH742 [显微镜];

学科分类号：

摘要：

Atom probe tomography and scanning transmission electron microscopy has been used to analyze a commercial microelectronics device prepared by depackaging and focused ion beam milling. Chemical and morphological data are presented from the source, drain and channel regions, and part of the gate oxide region of an Intel (R) i5-650 p-FET device demonstrating feasibility in using these techniques to investigate commercial chips.

引用

页数：4

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