Absorption mechanisms of silicon nanocrystals in cosputtered silicon-rich-silicon oxide films

被引：19

作者：

Podhorodecki, A. ^{[1
]}

Misiewiez, J. ^{[1
]}

Gourbilleau, F. ^{[2
]}

Rizk, R. ^{[2
]}

机构：

[1] Wroclaw Univ Technol, Inst Phys, PL-50370 Wroclaw, Poland

[2] CNRS, SIFCOM, Lab Interface Struct & Thin Layer Funct, UMR 6176, F-14050 Caen, France

来源：

ELECTROCHEMICAL AND SOLID STATE LETTERS | 2008年 / 11卷 / 03期

关键词：

D O I：

10.1149/1.2828207

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Optical properties of silicon-rich-silicon oxide (SRSO) films have been investigated by emission and absorption spectroscopies in the broad spectral range. The impact of the different hydrogen partial pressure of the sputtering method on the absorption proper-ties of SRSO films has been described and commented on. For all samples, a strong and complex emission band, centered at similar to 1.6 eV, has been observed. It has been shown that the most dominant absorption transition, centered at similar to 4.0 eV, is related to the direct absorption in Si nanocrystals and depends on their size. Moreover, no evidence of a quasidirect absorption band was identified. (c) 2008 The Electrochemical Society.

引用

页码：K31 / K33

页数：3

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