Analytic Oxide Capacitance Model of Double- and Surrounding-Gate Metal-Oxide-Semiconductor Field-Effect Transistors in Linear Region by Considering Inversion-Layer Capacitance

被引：2
|
作者：
Choi, Byung-Kil [1 ]
Jeong, Min-Kyu [2 ,3 ]
Kwon, Hyuck-In [4 ]
Lee, Jong-Ho [2 ,3 ]
机构：
[1] Hynix Semicond Inc, Memory R&D Div, Ichon 467701, Gyeonggi Do, South Korea
[2] Seoul Natl Univ, ISRC, Seoul 151742, South Korea
[3] Seoul Natl Univ, Sch Elect Engn, Seoul 151742, South Korea
[4] Chung Ang Univ, Sch Elect & Elect Engn, Seoul 156756, South Korea
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 2010年 / 49卷 / 10期
关键词：
DRAIN-CURRENT; MOSFETS; CHARGE;
D O I：
10.1143/JJAP.49.104201
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Inversion charge (Q(i)) and oxide capacitance (C'(ox)) of undoped (or lightly doped) or doped double-gate (DG) and surrounding-gate (SG) metaloxide- semiconductor field-effect transistors (MOSFETs) with long channel were analytically modeled by considering inversion-layer capacitance (C(i)) in linear region. The Q(i) model of DG and SG MOSFETs was derived with a closed-form as a function of gate bias (V(GS)), threshold voltage (V(th)), and body structure factor (n) using one-dimensional (1D) Poisson's equation considering the mobile carrier. The n which reflects silicon body structure effect is 1 for DG MOSFETs and less than 1 for SG MOSFETs irrespective of channel doping (N(b)). From the derived Q(i) model considering the C(i) effect, the C'(ox) was modeled and applied to the I(D)-V(GS) model of undoped or doped DG and SG MOSFETs in linear region. The compact current model using our proposed C'(ox) predicted more accurately the on-current behavior than that with the oxide capacitance (C(ox)) in linear region. (C) 2010 The Japan Society of Applied Physics
引用
收藏
页码：1042011 / 1042016
页数：6
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