A 21mW 15b 48MS/s Zero-Crossing Pipeline ADC in 0.13μm CMOS with 74dB SNDR

被引：0
|
作者：
Chang, Dong-Young [1 ]
Munoz, Carlos [2 ]
Daly, Denis [2 ]
Shin, Soon-Kyun [2 ]
Guay, Kevin [2 ]
Thurston, Thomas [2 ]
Lee, Hae-Seung [3 ]
Gulati, Kush [1 ]
Straayer, Matthew [2 ]
机构：
[1] Maxim Integrated, San Jose, CA 95134 USA
[2] Maxim Integrated, North Chelmsford, MA USA
[3] MIT, Cambridge, MA 02139 USA
来源：
2014 IEEE INTERNATIONAL SOLID-STATE CIRCUITS CONFERENCE DIGEST OF TECHNICAL PAPERS (ISSCC) | 2014年 / 57卷
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：204 / +
页数：3
相关论文
共 25 条
  • [11] A 30-mW 8-b 125-MS/s pipelined ADC in 0.13-μm CMOS
    Heedley, Perry L.
    Dyer, Kenneth C.
    Matthews, Thomas W.
    Isakanian, Patrick
    Thanh, Chuc
    ANALOG INTEGRATED CIRCUITS AND SIGNAL PROCESSING, 2008, 56 (1-2) : 43 - 51
  • [12] A 30-mW 8-b 125-MS/s pipelined ADC in 0.13-μm CMOS
    Perry L. Heedley
    Kenneth C. Dyer
    Thomas W. Matthews
    Patrick Isakanian
    Chuc Thanh
    Analog Integrated Circuits and Signal Processing, 2008, 56 : 43 - 51
  • [13] A 12b 200MS/s Frequency Scalable Zero-Crossing Based Pipelined ADC in 55nm CMOS
    Shin, Soon-Kyun
    Rudell, Jacques C.
    Daly, Denis C.
    Munoz, Carlos E.
    Chang, Dong-Young
    Gulati, Kush
    Lee, Hae-Seung
    Straayer, Matthew Z.
    2012 IEEE CUSTOM INTEGRATED CIRCUITS CONFERENCE (CICC), 2012,
  • [14] A 1.2V 220MS/s 10b pipeline ADC implemented in 0.13μm digital CMOS
    Hernes, B
    Briskemyr, A
    Andersen, TN
    Telsto, F
    Bonnerud, TE
    Moldsvor, O
    2004 IEEE INTERNATIONAL SOLID-STATE CIRCUITS CONFERENCE, DIGEST OF TECHNICAL PAPERS, 2004, 47 : 256 - 257
  • [15] A 10 b 25 MS/s 4.8 mW 0.13 μm CMOS ADC with switched-bias power-reduction techniques
    Choi, Hee-Cheol
    Kim, Young-Ju
    Lee, Kyung-Hoon
    Kim, Younglok
    Lee, Seung-Hoon
    INTERNATIONAL JOURNAL OF CIRCUIT THEORY AND APPLICATIONS, 2009, 37 (09) : 955 - 967
  • [16] A 97mW 110MS/s 12b pipeline ADC implemented in 0.18μm digital CMOS
    Andersen, TN
    Briskemyr, A
    Telsto, F
    Bjornsen, J
    Bonnerud, TE
    Hernes, B
    Moldsvor, O
    ESSCIRC 2004: PROCEEDINGS OF THE 30TH EUROPEAN SOLID-STATE CIRCUITS CONFERENCE, 2004, : 247 - 250
  • [17] A 97mW 110MS/s 12b pipeline ADC implemented in 0.18μm digital CMOS
    Andersen, TN
    Briskemyr, A
    Telsto, F
    Bjornsen, J
    Bonnerud, TE
    Hernes, B
    Moldsvor, O
    DESIGNERS' FORUM: DESIGN, AUTOMATION AND TEST IN EUROPE CONFERENCE AND EXHIBITION, 2005, : 219 - 222
  • [18] A 21-mW 8-b 125-MSample/s ADC in 0.09-mm2 0.13-μm CMOS
    Mulder, J
    Ward, CM
    Lin, CH
    Kruse, D
    Westra, JR
    Lugthart, M
    Arslan, E
    de Plassche, RJV
    van der Goes, FAL
    IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2004, 39 (12) : 2116 - 2125
  • [19] A 10 b 200 MS/s 1.8 mm2 83 mW 0.13 μm CMOS ADC based on highly linear integrated capacitors
    Kim, Young-Ju
    Cho, Young-Jae
    Sa, Doo-Hwan
    Lee, Seung-Hoon
    IEICE TRANSACTIONS ON ELECTRONICS, 2007, E90C (10): : 2037 - 2043
  • [20] A 52mW 10b 210MS/s Two-Step ADC for Digital-IF Receivers in 0.13 μm CMOS
    Cao, Zhiheng
    Yan, Shouli
    PROCEEDINGS OF THE IEEE 2008 CUSTOM INTEGRATED CIRCUITS CONFERENCE, 2008, : 309 - 312
123