A stress relaxation mechanism through buckling-induced dislocations in thin films

被引：4

作者：

Durinck, Julien ^{[1
]}

Coupeau, Christophe ^{[1
]}

Colin, Jerome ^{[1
]}

Grilhe, Jean ^{[1
]}

机构：

[1] Univ Poitiers, CNRS, UMR 6630, Lab PHYMAT,SP2MI, F-86962 Futuroscope, France

来源：

JOURNAL OF APPLIED PHYSICS | 2010年 / 108卷 / 02期

关键词：

MISFIT DISLOCATION; AFM OBSERVATIONS; DELAMINATION; SUBSTRATE; STABILITY; LAYERS;

D O I：

10.1063/1.3457225

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on molecular dynamics simulations of thin film buckling which show that during the buckling phenomena dislocations can be emitted from specific region of the film where the heterogeneous stress was found to be maximum and larger than in the planar adherent part. A scenario of formation of misfit dislocations in the planar interface which lead to stress relaxation is finally proposed. (C) 2010 American Institute of Physics. [doi:10.1063/1.3457225]

引用

页数：3

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