X-ray diagnostics of P-HEMT AlGaAs/InGaAs/GaAs structures

被引：1
|
作者：
Subbotin, I. A.
Chuev, M. A.
Pashaev, E. M.
Imamov, R. M.
Galiev, G. B.
Tikhomirov, S. A.
Kacerovsky, P.
机构：
[1] Russian Acad Sci, AV Shubnikov Crystallog Inst, Moscow 119333, Russia
[2] Russian Acad Sci, Inst Phys & Technol, Moscow 117218, Russia
[3] Russian Res Ctr, IV Kurchatov Atom Energy Inst, Moscow 123182, Russia
[4] Russian Acad Sci, Inst Ultrahigh Frequency Semicond Elect, Moscow 117105, Russia
[5] Acad Sci Czech Republic, Inst Radio Engn & Elect, CR-18251 Prague, Czech Republic
来源：
CRYSTALLOGRAPHY REPORTS | 2007年 / 52卷 / 04期
基金：
俄罗斯基础研究基金会;
关键词：
D O I：
10.1134/S1063774507040074
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
The structural characteristics of the P-HEMT AlGaAs/InGaAs/GaAs heterostructure have been studied bv high-resolution X-ray diffractometry. The parameters of the heterostructure layers were determined by simultaneous analysis of the X-ray reflection curves for the (004) and ( 113) crystallographic planes. Inter- face diffusion has been established for the InyGa1-y. As quantum well and the Al-x,Ga1-x As spacer layer, which arc characterized by reconstructed profiles of the lattice parameter distribution and anisotropic distribution of random displacements in the layer plane and in the perpendicular direction.
引用
收藏
页码：611 / 617
页数：7
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